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2N3906RLRPG

Onsemi

2N3906RLRPG by Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

Median Price

$0.521

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 84,354 parts In-Stock

1+ parts

$0.020

100+ parts

$0.020

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$0.020

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84,354

$0.020

$0.020

$0.020

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Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$1.022

100+ parts

$0.930

1k+ parts

$0.838

10k+ parts

-

1,000

$1.022

$0.930

$0.838

-

Distributors (In-Stock)

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Digiode

USA . 895 parts In-Stock

1+ parts

$0.019

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-

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895

$0.019

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Chip Stock

USA . 57,000 parts In-Stock

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57,000

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Vyrian

USA . 5,396 parts In-Stock

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VNN

France . 4,111 parts In-Stock

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Bristol Electronics

USA . 939 parts In-Stock

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939

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Distributors (Availability)

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Ampacity Inc.

Singapore . 42,438 parts In-Stock

1+ parts

$0.017

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-

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42,438

$0.017

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Corphita

USA . 1,727 parts In-Stock

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$0.018

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1,727

$0.018

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Corohmni

South Africa . 437 parts In-Stock

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$0.020

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437

$0.020

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Aztec Data Supply Inc.

USA . 254 parts In-Stock

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$1.010

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254

$1.010

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$1.022

100+ parts

$0.930

1k+ parts

$0.838

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-

1,000

$1.022

$0.930

$0.838

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AZTECH Wire

Italy . 392 parts In-Stock

1+ parts

$22.110

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392

$22.110

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ChipstoGo Electronic ltd

UK . 8,000 parts In-Stock

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Problanco Electronics

Mexico . 6,633 parts In-Stock

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Kepictronics

USA . 6,240 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,784 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Kulean Microsystems

USA . 3,941 parts In-Stock

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SupplyDigital Components

Austria . 3,894 parts In-Stock

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TANS Electronics

Latvia . 2,058 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 981 parts In-Stock

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981

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UHIMA Technologies

Türkiye . 763 parts In-Stock

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763

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Continental Prestige Electronics

USA . 562 parts In-Stock

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3906RLRPG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

2N3906RLRPG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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