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DTC144WM3T5G

Onsemi

DTC144WM3T5G by Onsemi

DTC144WM3T5G by Onsemi is a NPN BJT transistor with built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V and can handle a max collector current of 0.1A. With a small outline package style and operating temperature up to 150 °C, it is suitable for surface mount designs requiring compact components.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 7,350 parts In-Stock

1+ parts

$0.634

100+ parts

$0.147

1k+ parts

$0.091

10k+ parts

-

7,350

$0.634

$0.147

$0.091

-

Rochester

USA . 640,127 parts In-Stock

1+ parts

-

100+ parts

$0.046

1k+ parts

$0.038

10k+ parts

$0.034

640,127

-

$0.046

$0.038

$0.034

DigiKey

USA . 640,127 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.060

640,127

-

-

-

$0.060

Verical

USA . 304,127 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.043

304,127

-

-

-

$0.043

Distributors (In-Stock)

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Digiode

USA . 249 parts In-Stock

1+ parts

$0.034

100+ parts

-

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-

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249

$0.034

-

-

-

Chip Stock

USA . 36,000 parts In-Stock

1+ parts

-

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36,000

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Vyrian

USA . 9,945 parts In-Stock

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-

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9,945

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,091 parts In-Stock

1+ parts

$0.032

100+ parts

-

1k+ parts

-

10k+ parts

-

2,091

$0.032

-

-

-

Corohmni

South Africa . 420 parts In-Stock

1+ parts

$0.036

100+ parts

-

1k+ parts

-

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420

$0.036

-

-

-

Native Components

USA . 189 parts In-Stock

1+ parts

$9.256

100+ parts

-

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-

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189

$9.256

-

-

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Northwest PG Solutions

USA . 921 parts In-Stock

1+ parts

$10.182

100+ parts

$9.164

1k+ parts

-

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921

$10.182

$9.164

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AZTECH Wire

Italy . 406 parts In-Stock

1+ parts

$15.510

100+ parts

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406

$15.510

-

-

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Continental Prestige Electronics

USA . 640,127 parts In-Stock

1+ parts

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100+ parts

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$0.034

640,127

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-

-

$0.034

Perfect Parts

USA . 50,288 parts In-Stock

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50,288

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Kepictronics

USA . 10,000 parts In-Stock

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10,000

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Authorized Procurement Solutions

USA . 7,350 parts In-Stock

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7,350

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GreenTree Electronics

Israel . 7,350 parts In-Stock

1+ parts

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7,350

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SupplyDigital Components

Austria . 6,051 parts In-Stock

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6,051

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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Kulean Microsystems

USA . 3,116 parts In-Stock

1+ parts

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3,116

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TANS Electronics

Latvia . 988 parts In-Stock

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988

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UHIMA Technologies

Türkiye . 547 parts In-Stock

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547

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Problanco Electronics

Mexico . 386 parts In-Stock

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386

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Overview

Enhance your electronic projects with the DTC144WM3T5G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that is perfect for switching applications. With Onsemi's reputation for reliability and innovation, this NPN transistor offers customers a durable plastic/epoxy package with built-in resistor, ensuring convenience and efficiency in circuit designs. Whether you're a hobbyist or a professional, this surface-mount transistor with a maximum collector-emitter voltage of 50V and a minimum DC current gain of 80 will elevate the performance of your electronics. Upgrade your projects today with the DTC144WM3T5G and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile for different functions.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making it more convenient for use in compact applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in circuits that require rapid on/off functions.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly onto circuit boards, ideal for mass production and compact designs.

Maximum Power Dissipation (Abs): 0.6 W

With a high power dissipation rating, this transistor can handle moderate power levels without overheating.

Terminal Form: FLAT

Flat terminals ensure secure connections and ease of soldering, promoting stability in the circuit.

Maximum Collector-Emitter Voltage: 50 V

This voltage rating indicates the maximum voltage that can safely pass through the transistor, suitable for low to medium voltage applications.

Maximum Collector Current (IC): 0.1 A

Capable of handling up to 0.1A of current, making it suitable for low to medium current applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand various environmental conditions, ensuring reliable performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC144WM3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 2.1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTC144WM3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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