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2SA1774G

Onsemi

2SA1774G by Onsemi

2SA1774G by Onsemi is a PNP BJT transistor with hFE of 120, ideal for amplifier applications. With a max voltage of 50V and max current of 0.1A, it operates at up to 150°C. Featuring a transition frequency of 140MHz, this surface-mount device in a small outline package is suitable for compact electronic designs.

Median Price

$0.754

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 28,527 parts In-Stock

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-

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$0.018

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$0.015

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$0.013

28,527

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$0.018

$0.015

$0.013

Verical

USA . 27,000 parts In-Stock

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27,000

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Master Electronics

USA . 3,000 parts In-Stock

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$1.490

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$1.180

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3,000

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$1.490

$1.180

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Distributors (In-Stock)

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Digiode

USA . 253 parts In-Stock

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$0.024

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253

$0.024

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Chip Stock

USA . 60,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 28,626 parts In-Stock

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Vyrian

USA . 10,811 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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ComSIT USA

USA . 3,000 parts In-Stock

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IBS Electronics

USA . 3,000 parts In-Stock

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$1.937

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$1.534

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3,000

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$1.937

$1.534

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A2Z Electronics, Inc.

USA . 2,440 parts In-Stock

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PC Components Company LLC

USA . 2,228 parts In-Stock

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Bristol Electronics

USA . 2,228 parts In-Stock

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M&R Communications

USA . 1,371 parts In-Stock

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1,371

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Distributors (Availability)

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Corphita

USA . 1,162 parts In-Stock

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$0.022

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$0.022

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Corohmni

South Africa . 459 parts In-Stock

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$0.025

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459

$0.025

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Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$1.001

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$0.911

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$0.821

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450

$1.001

$0.911

$0.821

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Native Components

USA . 469 parts In-Stock

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$1.580

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469

$1.580

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Northwest PG Solutions

USA . 1,291 parts In-Stock

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$1.738

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$1.738

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AZTECH Wire

Italy . 1,188 parts In-Stock

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$10.570

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Perfect Parts

USA . 432,911 parts In-Stock

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432,911

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Authorized Procurement Solutions

USA . 28,838 parts In-Stock

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GreenTree Electronics

Israel . 28,626 parts In-Stock

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Lixinc

USA . 9,068 parts In-Stock

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Continental Prestige Electronics

USA . 8,350 parts In-Stock

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$0.065

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$0.064

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QUARKTWIN TECHNOLOGY LTD

USA . 7,889 parts In-Stock

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Kepictronics

USA . 7,150 parts In-Stock

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Microchip USA

USA . 4,645 parts In-Stock

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Problanco Electronics

Mexico . 4,612 parts In-Stock

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SupplyDigital Components

Austria . 3,107 parts In-Stock

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Kulean Microsystems

USA . 2,691 parts In-Stock

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TANS Electronics

Latvia . 2,256 parts In-Stock

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Metaverse IC Inc.

Canada . 2,210 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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UHIMA Technologies

Türkiye . 553 parts In-Stock

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553

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iodParts Technologies Inc.

India . 114 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality 2SA1774G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and reliability. This Small Signal Bipolar Junction Transistor (BJT) is perfect for amplifier applications, offering exceptional value and benefits. With its PNP polarity, single configuration, and small outline package style, this transistor provides versatility and efficiency. Trust Onsemi's 2SA1774G to deliver superior results for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability in various environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplified circuit design and easy to use in single transistor applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in audio or signal amplification.

Surface Mount: YES

Ease of PCB mounting and space-saving design for compact electronic devices.

Package Shape: RECTANGULAR

Compact and efficient design for easy integration into electronic circuits.

Terminal Form: GULL WING

Facilitates easy soldering and reliable electrical connections on the PCB.

No. of Terminals: 3

Simplified pin configuration for easy circuit integration.

Maximum Power Dissipation (Abs): 0.15 W

Efficient power handling capability for reliable operation without overheating.

Package Style (Meter): SMALL OUTLINE

Compact package size for space-constrained applications.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures accurate amplification of signals in amplifier circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range for versatile use in different environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 0.1 A

Adequate collector current rating for various amplifier applications.

Terminal Finish: MATTE TIN

Durable terminal finish for reliable solder joints and long-term performance.

Terminal Position: DUAL

Dual terminal position for stable mechanical mounting on the PCB.

Maximum Time At Peak Reflow Temperature (s): 30

Sufficient time for peak reflow temperature, ensuring proper soldering during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability for reliable soldering in surface mount applications.

Nominal Transition Frequency (fT): 140 MHz

High transition frequency for efficient signal amplification and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1774G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA1774G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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