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MPS751RLRPG

Onsemi

MPS751RLRPG by Onsemi

MPS751RLRPG by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.625W, and max. collector-emitter voltage of 60V. Ideal for amplifier applications due to its high transition frequency of 75MHz and max. collector current of 2A in a cylindrical package style.

Median Price

$0.264

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,002 parts In-Stock

1+ parts

-

100+ parts

$0.264

1k+ parts

$0.219

10k+ parts

$0.196

1,002

-

$0.264

$0.219

$0.196

Distributors (In-Stock)

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Digiode

USA . 1,194 parts In-Stock

1+ parts

$0.206

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1,194

$0.206

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Chip Stock

USA . 36,000 parts In-Stock

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36,000

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Vyrian

USA . 9,736 parts In-Stock

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9,736

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North Shore Components

USA . 3,271 parts In-Stock

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3,271

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J2 Sourcing AB

Sweden . 1,700 parts In-Stock

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1,700

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Distributors (Availability)

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Corphita

USA . 84 parts In-Stock

1+ parts

$0.195

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84

$0.195

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Corohmni

South Africa . 430 parts In-Stock

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$0.217

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430

$0.217

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AZTECH Wire

Italy . 802 parts In-Stock

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$19.420

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802

$19.420

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Kepictronics

USA . 25,500 parts In-Stock

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25,500

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Metaverse IC Inc.

Canada . 10,516 parts In-Stock

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10,516

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 4,123 parts In-Stock

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Kulean Microsystems

USA . 3,811 parts In-Stock

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SupplyDigital Components

Austria . 2,685 parts In-Stock

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2,685

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TANS Electronics

Latvia . 2,165 parts In-Stock

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UHIMA Technologies

Türkiye . 388 parts In-Stock

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388

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Overview

Unlock the potential of your electronic projects with the MPS751RLRPG by Onsemi. Manufactured with precision and expertise, this small signal bipolar junction transistor offers unparalleled performance in amplifier applications. With its PNP polarity, single configuration, and 3 terminals, this transistor ensures reliable operation and optimal power dissipation. Whether you're a seasoned professional or a hobbyist, the value and benefits of this product are undeniable. Trust Onsemi to deliver quality components that elevate your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and ensures easy integration into existing systems.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Package Shape: ROUND

Round package shape is compact and space-saving, suitable for applications where space is limited.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to solder the transistor onto a PCB, enhancing ease of assembly.

No. of Terminals: 3

3 terminals allow for easy connection in circuits, simplifying wiring and circuit design.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation, this transistor can handle higher power levels, ideal for demanding applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is robust and provides good heat dissipation, enhancing overall performance.

Minimum DC Current Gain (hFE): 40

Minimum DC current gain of 40 ensures reliable and consistent amplification in circuits.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for use in environments with elevated temperatures.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltages in circuits.

Transistor Element Material: SILICON

Silicon material offers good performance characteristics and reliability, ensuring long-term operation.

Maximum Collector Current (IC): 2 A

High maximum collector current rating allows for handling of high current levels in circuits.

Terminal Finish: TIN SILVER COPPER

Quality terminal finish ensures good conductivity and solderability for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and soldering on PCBs, enhancing ease of use.

Peak Reflow Temperature °C: 260

Can withstand high peak reflow temperatures during soldering processes, ensuring robust assembly.

Nominal Transition Frequency (fT): 75 MHz

High nominal transition frequency indicates good high-frequency performance in amplifier circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS751RLRPG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS751RLRPG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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