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EMX2DXV6T5

Onsemi

EMX2DXV6T5 by Onsemi

The Onsemi EMX2DXV6T5 is a NPN BJT transistor with 2 elements, hFE of 120, and VCE of 50V. Ideal for amplifier applications, it has a transition frequency of 180MHz and can handle a collector current of 0.1A. Suitable for surface mount with a small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 29,000 parts In-Stock

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Vyrian

USA . 6,812 parts In-Stock

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Digiode

USA . 1,452 parts In-Stock

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AZTECH Wire

Italy . 146 parts In-Stock

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$12.000

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Component Stockers USA

USA . 352 parts In-Stock

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$99.990

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352

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Problanco Electronics

Mexico . 4,324 parts In-Stock

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Kulean Microsystems

USA . 3,451 parts In-Stock

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TANS Electronics

Latvia . 1,537 parts In-Stock

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1,537

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SupplyDigital Components

Austria . 1,274 parts In-Stock

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Corphita

USA . 1,178 parts In-Stock

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UHIMA Technologies

Türkiye . 814 parts In-Stock

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814

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Northwest PG Solutions

USA . 802 parts In-Stock

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$4.224

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$4.224

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Corohmni

South Africa . 381 parts In-Stock

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Native Components

USA . 182 parts In-Stock

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$4.181

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Overview

Experience superior performance and reliability with the EMX2DXV6T5 by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers high-quality Small Signal Bipolar Junction Transistors that are perfect for amplifier applications. The NPN configuration and separate 2-element design make it versatile for various projects. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 120, this transistor offers unmatched value and benefits to customers. Upgrade your electronics with Onsemi's EMX2DXV6T5 for enhanced functionality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

Common and widely used polarity type for bipolar junction transistors in amplification circuits.

Configuration: SEPARATE, 2 ELEMENTS

Allows for flexibility in circuit design and provides improved performance in amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in signal amplification.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and effort during production.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures efficient signal amplification with minimal input power.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to medium voltage applications, providing a wide range of voltage handling capabilities.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate collector currents, making it versatile for various amplifier circuits.

Nominal Transition Frequency (fT): 180 MHz

High frequency capability allows for amplification of fast-changing signals with minimal distortion.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMX2DXV6T5 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

EMX2DXV6T5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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