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BC857CWT1G

Onsemi

BC857CWT1G by Onsemi

BC857CWT1G by Onsemi is a PNP BJT transistor with VCEsat of 0.65V, hFE of 420, and fT of 100MHz. Ideal for amplifier applications due to its small outline package style and max collector-emitter voltage of 45V. Suitable for surface mount designs with matte tin terminal finish.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 299 parts In-Stock

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$0.142

100+ parts

$0.053

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$0.024

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299

$0.142

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$0.024

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Adafruit Industries

USA . 1,000 parts In-Stock

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$0.843

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$0.800

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$0.800

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$0.843

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$0.800

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Verical

USA . 78,000 parts In-Stock

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Chip1Stop

Japan . 44,429 parts In-Stock

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$0.031

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44,429

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Farnell

UK . 10,470 parts In-Stock

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Element14

Singapore . 10,470 parts In-Stock

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$0.047

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EBV Elektronik

Germany . 3,000 parts In-Stock

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Rochester

USA . 95 parts In-Stock

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$0.033

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$0.028

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$0.025

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Newark

USA . 4 parts In-Stock

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$0.061

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$0.035

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4

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$0.061

$0.035

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Distributors (In-Stock)

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Digiode

USA . 1,438 parts In-Stock

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$0.005

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Nova Conductors

Japan . 450 parts In-Stock

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$0.038

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450

$0.038

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Mobius Materials

USA . 2,650 parts In-Stock

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$0.223

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$0.178

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Chip Stock

USA . 66,000 parts In-Stock

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NAC Semi

USA . 30,000 parts In-Stock

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Vyrian

USA . 5,634 parts In-Stock

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Semi Source

USA . 5,209 parts In-Stock

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VNN

France . 4,199 parts In-Stock

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TME

Poland . 1,800 parts In-Stock

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$0.028

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$0.026

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$0.023

1,800

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$0.023

ComSIT Distribution GmbH

Germany . 249 parts In-Stock

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Inventory MP

USA . 206 parts In-Stock

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Bristol Electronics

USA . 206 parts In-Stock

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Flip Electronics

USA . 50 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 26,582 parts In-Stock

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$0.004

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$0.004

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Semicontronic

India . 26,376 parts In-Stock

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26,376

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Corphita

USA . 1,432 parts In-Stock

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Corohmni

South Africa . 440 parts In-Stock

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Argo Parts USA

USA . 223 parts In-Stock

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$0.037

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$0.036

223

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Aranea Global

USA . 2,000 parts In-Stock

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$0.036

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2,000

$0.037

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Modulus Dynamics

Lithuania . 870 parts In-Stock

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$0.041

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$0.041

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$0.039

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870

$0.041

$0.041

$0.039

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Component Stockers USA

USA . 5,912 parts In-Stock

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$0.100

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$0.010

5,912

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$0.010

Continental Prestige Electronics

USA . 11,930 parts In-Stock

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$0.148

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$0.070

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$0.028

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11,930

$0.148

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$0.843

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$0.800

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$0.800

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$0.843

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Aztec Data Supply Inc.

USA . 4,952 parts In-Stock

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$1.263

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Perfect Parts

USA . 681,388 parts In-Stock

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Eastek

USA . 300,000 parts In-Stock

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RC Electronics

USA . 102,715 parts In-Stock

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Kepictronics

USA . 36,000 parts In-Stock

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Glotronic Ltd.

UK . 33,600 parts In-Stock

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Lixinc

USA . 19,014 parts In-Stock

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Formix International (Excess)

India . 11,300 parts In-Stock

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SupplyDigital Components

Austria . 6,153 parts In-Stock

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Problanco Electronics

Mexico . 3,678 parts In-Stock

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Kulean Microsystems

USA . 3,435 parts In-Stock

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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Robosynatics

Brazil . 2,102 parts In-Stock

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$11.634

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$11.634

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$11.634

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$11.634

$11.634

$11.634

Lucentia Tech

USA . 2,102 parts In-Stock

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$11.634

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$11.634

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$11.634

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$11.634

$11.634

UHIMA Technologies

Türkiye . 348 parts In-Stock

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TANS Electronics

Latvia . 231 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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Overview

Enhance your electronic projects with the BC857CWT1G PNP transistor by Onsemi. Manufactured with top-quality materials and advanced technology, this small signal BJT offers reliable performance and precise amplification capabilities. Ideal for applications requiring high gain and low noise, this transistor is perfect for a wide range of amplifier circuits. Trust Onsemi's reputation for excellence and choose the BC857CWT1G for superior quality, efficiency, and value in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuit designs, enhancing versatility.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity in assembly.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification.

Surface Mount: YES

The surface mount capability allows for easy and secure installation on circuit boards, saving space and reducing assembly time.

Maximum VCEsat: 0.65 V

The low VCEsat value results in minimal power loss and improved efficiency in operation.

Package Shape: RECTANGULAR

The rectangular package shape offers efficient use of space and easy integration into circuit layouts.

Terminal Form: GULL WING

The gull wing terminal form allows for secure solder connections, ensuring reliable performance.

No. of Terminals: 3

With three terminals, this transistor is easy to connect and suitable for a variety of circuit configurations.

Maximum Power Dissipation (Abs): 0.15 W

The low power dissipation helps prevent overheating and ensures long-term reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes this transistor ideal for compact and space-constrained applications.

Minimum DC Current Gain (hFE): 420

The high DC current gain ensures stable and consistent amplification of signals.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for reliable performance in various environmental conditions.

Maximum Collector-Base Capacitance: 4.5 pF

The low capacitance reduces signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 45 V

The high collector-emitter voltage rating allows for operation in a wide range of voltage levels.

Transistor Element Material: SILICON

Silicon material offers high reliability and stable performance over time.

Minimum Operating Temperature: -55 °C

The low operating temperature range ensures reliable operation in extreme cold conditions.

Maximum Collector Current (IC): 0.1 A

The high collector current rating allows for handling of larger current loads.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent conductivity and corrosion resistance for reliable connections.

Terminal Position: DUAL

The dual terminal position allows for versatile mounting options in circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature reduces the risk of component damage during soldering.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures secure solder connections for lasting performance.

Nominal Transition Frequency (fT): 100 MHz

The high transition frequency enables fast switching speeds and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC857CWT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.65 V

Trade Compliance

BC857CWT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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