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BC847CTT1G

Onsemi

BC847CTT1G by Onsemi

BC847CTT1G by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and a min DC current gain of 420. It is designed for amplifier applications, featuring a small outline package style and Gull Wing terminal form for surface mount assembly. With a max operating temperature of 150°C, it offers a nominal transition frequency of 100MHz, making it suitable for high-frequency amplification needs.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 987 parts In-Stock

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-

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$0.066

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$0.055

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$0.049

987

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$0.066

$0.055

$0.049

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Digiode

USA . 1,560 parts In-Stock

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$0.051

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Chip Stock

USA . 65,000 parts In-Stock

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Vyrian

USA . 5,578 parts In-Stock

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Pegasus Components GmbH

Germany . 3,000 parts In-Stock

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VNN

France . 2,918 parts In-Stock

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Flip Electronics

USA . 700 parts In-Stock

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Nova Conductors

Japan . 49 parts In-Stock

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Ampacity Inc.

Singapore . 681 parts In-Stock

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$0.046

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681

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Semicontronic

India . 675 parts In-Stock

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$0.046

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$0.045

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$0.045

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675

$0.046

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$0.045

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Corphita

USA . 111 parts In-Stock

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$0.049

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Corohmni

South Africa . 196 parts In-Stock

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$0.054

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Aztec Data Supply Inc.

USA . 323 parts In-Stock

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$1.710

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AZTECH Wire

Italy . 424 parts In-Stock

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$5.167

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Perfect Parts

USA . 22,039 parts In-Stock

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TANS Electronics

Latvia . 8,207 parts In-Stock

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SupplyDigital Components

Austria . 7,095 parts In-Stock

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Kulean Microsystems

USA . 5,686 parts In-Stock

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Kepictronics

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A-Z Elektronik GmbH

Germany . 5,202 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,468 parts In-Stock

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Argo Parts USA

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Problanco Electronics

Mexico . 1,699 parts In-Stock

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GreenTree Electronics

Israel . 685 parts In-Stock

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UHIMA Technologies

Türkiye . 228 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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Continental Prestige Electronics

USA . 124 parts In-Stock

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Overview

Discover the BC847CTT1G by Onsemi, a top-quality small signal bipolar junction transistor perfect for amplifier applications. With Onsemi's reputation for excellence in semiconductor manufacturing, this NPN transistor offers customers reliable performance and durability. Its compact design and surface-mount capabilities make it ideal for a range of electronic projects. Experience the benefits of high DC current gain, low power dissipation, and a wide operating temperature range. Trust Onsemi's BC847CTT1G to deliver exceptional value and performance for all your electronic needs.

Feature Benefit Bullets

MIL Conformity: YES

Being MIL Conformant ensures that this product meets the strict military standards for reliability and performance, making it a dependable choice for military applications.

Coupling Type: THREADED

The threaded coupling provides a secure and robust connection, ensuring that the connector stays firmly in place even in harsh environments or under vibration.

Empty Shell: YES

The empty shell allows for customization and flexibility in configuring the connector for specific needs or applications, making it versatile and adaptable.

Connector Type: MIL SERIES CONNECTOR

The MIL Series Connector is known for its durability and ruggedness, ideal for use in demanding military environments where reliability is crucial.

Total No. of Contacts: 10

Having 10 contacts allows for multiple signal or power connections to be made within a single connector, reducing the need for multiple connectors and simplifying the overall setup.

Backshell Type: SOLID

The solid backshell adds additional protection to the connection point, shielding it from environmental factors such as moisture or dust, ensuring a reliable and long-lasting connection.

Environmental Characteristics: ENVIRONMENT RESISTANT; FLAME RESISTANT; FLUID RESISTANT

The environmental resistance, flame resistance, and fluid resistance properties make this connector suitable for use in a wide range of challenging conditions, ensuring it remains functional and safe in various situations.

Mounting Type: CABLE

The cable mounting type allows for easy installation and connection to a cable, providing a secure and stable connection point for electrical or data transmission.

Shell Material: STAINLESS STEEL

The stainless steel shell material offers durability and corrosion resistance, ideal for use in outdoor or harsh environments where the connector needs to withstand challenging conditions.

Contact Gender: MALE OR FEMALE

Supporting both male and female contact genders allows for flexibility in mating connectors and ensures compatibility with various devices or equipment, making it a versatile choice for different applications.

Body or Shell Style: PLUG

The plug style body or shell makes it easy to connect and disconnect the connector, providing convenience during installation or maintenance tasks.

Shell Size: 16

The size 16 shell provides a good balance between compactness and robustness, suitable for various applications where space is limited but durability is still essential.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847CTT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC847CTT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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