Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395
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MPSA05RLRMG
Onsemi
MPSA05RLRMG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 60V and max current of 0.5A. With a min DC current gain of 100, it's ideal for amplifier applications. This through-hole transistor has a package style of cylindrical and can handle up to 150°C operating temperature.
.5 A
60 V
SINGLE
100
TO-92
O-PBCY-T3
e1
1
3
150 Cel
PLASTIC/EPOXY
ROUND
CYLINDRICAL
260
NPN
.625 W
Not Qualified
Other Transistors
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
AMPLIFIER
SILICON
100 MHz
MPSA13RLRPG
MPSA13RLRPG by Onsemi is a NPN Darlington BJT with hFE of 10000, VCEO of 30V, and IC of 0.5A. Ideal for amplifier applications due to its high gain and low collector-emitter voltage. Its cylindrical package makes it suitable for through-hole mounting in various electronic circuits.
30 V
DARLINGTON
10000
125 MHz
MPSA14RLRAG
MPSA14RLRAG by Onsemi is a NPN Darlington BJT with hFE of 20000, VCEO of 30V, and fT of 125MHz. Ideal for amplifier applications due to its high gain and frequency response in a cylindrical package with through-hole terminals.
20000
Tin/Silver/Copper (Sn/Ag/Cu)
40
MPSA27G
MPSA27G by Onsemi is a NPN Darlington BJT transistor with hFE of 10000, Vce of 60V, and fT of 125MHz. Ideal for amplifier applications due to its high gain and operating temperature up to 150 °C. Packaged in cylindrical shape with through-hole terminals for easy installation.
TO-226AA
MPSA42RLRPG
MPSA42RLRPG by Onsemi is a NPN BJT transistor with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for amplifier applications, it has a min hFE of 40 and can operate up to 150°C. The package is cylindrical with through-hole terminals made of tin silver copper.
300 V
50 MHz
MPSA43ZL1G
MPSA43ZL1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 200V, ideal for low-power applications. Featuring a min. DC current gain of 40 and max. operating temp of 150°C, it's suitable for small signal amplification in various electronic circuits. With a peak reflow temp of 260°C and nominal transition frequency of 50MHz, this transistor offers reliable performance in through-hole configurations.
EUROPEAN PART NUMBER
.05 A
200 V
MPSA44RLRAG
MPSA44RLRAG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. It has a min. DC current gain of 40 and max. operating temp of 150 °C, making it suitable for high-power dissipation up to 0.625W in cylindrical package style.
.3 A
400 V
SWITCHING
20 MHz
MPSA55RLRAG
MPSA55RLRAG by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min hFE of 100 and can handle a max collector-emitter voltage of 60V. With a max operating temperature of 150°C, it has a power dissipation of 0.625W in a cylindrical package suitable for through-hole mounting.
PNP
MPSA56RLRMG
MPSA56RLRMG by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 0.5A, and min. DC current gain of 100. Ideal for amplifier applications due to its cylindrical package style, it has a max power dissipation of 0.625W and operates up to 150 °C temperature range.
80 V
MPSA92RLRAG
MPSA92RLRAG by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 300V, ideal for amplifier applications. Featuring a min. DC current gain of 25 and max. power dissipation of 0.625W, it operates at up to 150 °C. Its through-hole package style and cylindrical shape make it suitable for various electronic designs.
25
MPSA92RLRPG
MPSA92RLRPG by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 25, and can handle up to 300V collector-emitter voltage. Its package style is cylindrical with through-hole terminals, suitable for various electronic circuits.
NSL12AWT1G
NSL12AWT1G by Onsemi is a PNP BJT transistor with 6 terminals, capable of handling up to 2A collector current. It has a max operating temperature of 150 °C and a transition frequency of 100MHz. Ideal for switching applications in small outline packages.
2 A
12 V
R-PDSO-G6
e3
6
RECTANGULAR
SMALL OUTLINE
.65 W
YES
MATTE TIN
GULL WING
DUAL
30
PN2222AG
PN2222AG by Onsemi is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.625W, hFE of 75, and fT of 300MHz. Ideal for switching applications due to its max collector-emitter voltage of 40V and max collector current of 0.6A.
.6 A
40 V
75
300 MHz
285 ns
35 ns
PN2907AG
PN2907AG by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1.5W, and hFE of 50. Ideal for applications requiring a max collector-emitter voltage of 60V, such as amplifiers and signal processing circuits due to its high transition frequency of 200MHz.
50
1.5 W
200 MHz
100 ns
45 ns
DDA122LU-7-F
Diodes Incorporated
PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTOR RATIO 45.45
.1 A
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
56
2
.2 W
BIP General Purpose Small Signal
DDTB122LC-7-F
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;
BUILT-IN BIAS RESISTOR RATIO IS 45.45
SINGLE WITH BUILT-IN RESISTOR
R-PDSO-G3
DDTB122TC-7-F
BUILT-IN BIAS RESISTOR
DDTB142JC-7-F
BUILT-IN BIAS RESISTOR RATIO IS 21.28
DDTB142JU-7-F
BUILT-IN BIAS RESISTANCE RATIO IS 21.28
DDTB142TC-7-F
DDTC122LE-7-F
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;
.15 W
DDTC122LU-7-F
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTOR RATIO IS 45.45
DDTD122LC-7-F
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;
DDTD122TC-7-F
BUILT IN BIAS RESISTOR
DDTD142TC-7-F
MSD1328-ST1G
The Onsemi MSD1328-ST1G is a NPN BJT transistor with 300 min hFE, 0.5A IC, and 20V VCE. Ideal for amplifier applications, it comes in a small outline package with GULL WING terminals for surface mount assembly. Operating up to 150 °C, it has a peak reflow temperature of 260°C.
20 V
300
TIN
MUN5113T1G
MUN5113T1G by Onsemi is a PNP BJT transistor with VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and collector-emitter voltage of 50V. The package is surface mountable with GULL WING terminals in a small outline style.
BUILT-IN BIAS RESISTOR RATIO IS 1
80
-55 Cel
.31 W
Matte Tin (Sn) - annealed
.25 V
MPS2907ARL1G
MPS2907ARL1G by Onsemi is a PNP BJT with max. power dissipation of 0.36W, hFE of 100, and max. operating temp of 150 °C. Ideal for applications requiring a small signal transistor with a collector-emitter voltage of 60V, such as amplifiers or switching circuits due to its high transition frequency of 200MHz.
.36 W
MPS2907ARLREG
MPS2907ARLREG by Onsemi is a PNP BJT with hFE of 100, VCEO of 60V, and IC of 0.6A. Ideal for applications requiring fast switching such as signal amplification in electronic circuits. Package style: cylindrical, terminal finish: tin silver copper, and max operating temp: 150 °C make it versatile for various designs.
BCX70J-TP
Micro Commercial Components
BCX70J-TP by Micro Commercial Components is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 45V, hFE of 250, and fT of 250MHz. With surface mount capability and GULL WING terminals, it's ideal for compact electronic designs requiring fast switching speeds.
LOW NOISE
.2 A
45 V
250
.25 W
10
250 MHz
800 ns
150 ns
MMBT3904_NL
Fairchild Semiconductor
MMBT3904_NL by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 40V, max collector current of 0.2A, and min DC current gain of 30. With a small outline package style and surface mount capability, it operates b/w -55 to 150°C and has a transition frequency of 300MHz.
COLLECTOR
.35 W
250 ns
70 ns
MMBT3906_NL
MMBT3906_NL by Fairchild Semiconductor is a PNP BJT transistor with 3 terminals, suitable for switching applications. It has a max collector-emitter voltage of 40V and max collector current of 0.2A. With a transition frequency of 250MHz, it operates b/w -55 to 150°C, making it ideal for small outline packages in electronic devices.
300 ns
DS2003TMT/NOPB
National Semiconductor
DS2003TMT/NOPB by National Semiconductor is a NPN BJT transistor for switching applications. It has 7 elements, 16 terminals, and can handle a max collector-emitter voltage of 55V. With surface mount capability and a max collector current of 0.5A, it's ideal for compact electronic designs.
LOGIC LEVEL COMPATIBLE
55 V
COMPLEX
R-PDSO-G16
7
16
Matte Tin (Sn)
DS2003TMTX/NOPB
DS2003TMTX/NOPB by National Semiconductor is a NPN BJT transistor for switching applications. It has 7 elements, 16 terminals, and a max IC of 0.5A. With a VCE of 55V, it is ideal for surface mount designs requiring high-speed switching capabilities.
SSM2220PZ
Analog Devices
SSM2220PZ by Analog Devices is a PNP BJT with 2 elements and built-in diode, ideal for amplifier applications. It has a min hFE of 80, max operating temp of 150 °C, and max VCE of 36V. The transistor's package style is in-line with through-hole terminals and a transition frequency of 190MHz.
.02 A
36 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
R-PDIP-T8
8
IN-LINE
190 MHz
SSM2220SZ-REEL
Analog Devices' SSM2220SZ-REEL is a PNP BJT with 2 elements, built-in diode, and hFE of 80. Ideal for amplifier applications, it operates up to 150°C with VCE max of 36V. This surface-mount transistor has a package style of SOIC-8 and fT of 190MHz.
R-PDSO-G8
SSM2220SZ
Analog Devices' SSM2220SZ is a PNP BJT with 2 elements and built-in diode, ideal for amplifier applications. With a max operating temp of 150 °C, it offers hFE of 80 and VCE of 36V. This surface-mount transistor has a transition frequency of 190MHz in a small outline package.
MMBT2222AK
MMBT2222AK by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals, max. power dissipation of 0.35W, and max. collector-emitter voltage of 40V. It is used in small outline packages for applications requiring a DC current gain (hFE) of at least 40, operating temperatures up to 150°C, and a transition frequency (fT) of 300MHz.
MMBT3904K
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BF422G
BF422G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.8W, hFE of 50, and operates at up to 150 °C. With a max VCE of 250V and fT of 60MHz, it's suitable for various electronic circuits requiring high voltage amplification.
250 V
.8 W
60 MHz
MMJT9435T3G
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 110 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;
3 A
90
TO-261AA
R-PDSO-G4
4
3 W
110 MHz
NSBA113EDXV6T1G
NSBA113EDXV6T1G by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 3, VCE of 50V, and IC of 0.1A. It comes in a small outline package suitable for surface mount applications. Ideal for low-power electronic circuits requiring high gain and voltage amplification.
BUILT IN BIAS RESISTOR RATIO IS 1
R-PDSO-F6
.5 W
FLAT
DTC144WET1G
DTC144WET1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. The package is surface mountable with Gull Wing terminals in a small outline rectangular shape.
BUILT-IN BIAS RESISTOR RATIO IS 2.1
NOT SPECIFIED
MPS650RLRAG
MPS650RLRAG by Onsemi is a NPN BJT transistor with 40V VCEO, 2A IC, and 1.5W Ptot. Ideal for amplifier applications due to its hFE of 40 and fT of 75MHz. Packaged in cylindrical shape with through-hole terminals for easy installation.
75 MHz
MPS750G
MPS750G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 1.5W, and max. collector current of 2A. Ideal for amplifier applications, it has a min. DC current gain of 40 (hFE), operates up to 150 °C, and offers a nominal transition frequency of 75MHz in a cylindrical package style.
MPS750RLRPG
MPS750RLRPG by Onsemi is a PNP BJT with 40V VCEO, 2A IC, and 75MHz fT. Ideal for amplifier applications due to its 1.5W power dissipation, SILICON material, and THROUGH-HOLE terminals in a CYLINDRICAL package style. Operating up to 150 °C, it offers reliable performance in various electronic designs.
MPS751RLRAG
MPS751RLRAG by Onsemi is a PNP BJT with 3 terminals, 1.5W power dissipation, and 60V collector-emitter voltage. Ideal for amplifier applications, it has a DC current gain of 40 and operates at up to 150 °C. The transistor's SILICON element ensures reliable performance in various electronic circuits.
MPS751ZL1G
MPS751ZL1G by Onsemi is a PNP BJT transistor with 60V VCEO, 2A IC, and 75MHz fT. Ideal for amplifier applications due to its 1.5W power dissipation, hFE of 40, and operating temperature up to 150 °C. Packaged in a cylindrical body with through-hole terminals for easy installation.
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