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BF422G

Onsemi

BF422G by Onsemi

BF422G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.8W, hFE of 50, and operates at up to 150 °C. With a max VCE of 250V and fT of 60MHz, it's suitable for various electronic circuits requiring high voltage amplification.

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Lifecycle Status

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4

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1k+

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Chip Stock

USA . 45,000 parts In-Stock

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Vyrian

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Digiode

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Anansix

USA . 1,920 parts In-Stock

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AZTECH Wire

Italy . 751 parts In-Stock

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$14.010

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751

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One Stop Electronics

USA . 1,323 parts In-Stock

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$32.100

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Component Stockers USA

USA . 742 parts In-Stock

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$99.990

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UNI Independent Distributors

Spain . 6,557 parts In-Stock

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SupplyDigital Components

Austria . 4,498 parts In-Stock

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Northwest PG Solutions

USA . 3,735 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,270 parts In-Stock

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Problanco Electronics

Mexico . 2,454 parts In-Stock

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Corphita

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Kulean Microsystems

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TANS Electronics

Latvia . 2,180 parts In-Stock

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Native Components

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UHIMA Technologies

Türkiye . 863 parts In-Stock

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Corohmni

South Africa . 370 parts In-Stock

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Overview

Discover the exceptional quality and performance of the BF422G by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor (BJT) designed for amplifier applications. With a maximum power dissipation of 0.8W and a minimum DC current gain of 50, this NPN transistor offers unparalleled reliability and efficiency. The durable plastic/epoxy package body ensures long-lasting durability, while the cylindrical shape makes it easy to integrate into any design. Trust Onsemi's reputation for excellence and elevate your projects with the BF422G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, making this transistor suitable for a wide range of amplifier applications.

Configuration: SINGLE

Simplified design with only one transistor in the package, making it easier to integrate into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in amplifier circuits.

Package Shape: ROUND

Allows for easy mounting and integration into circular or curved circuit designs.

Terminal Form: THROUGH-HOLE

Facilitates secure and reliable connections to a circuit board, reducing the risk of electrical failures.

Maximum Power Dissipation (Abs): 0.8 W

Capable of handling higher power levels, making it suitable for applications that require amplification of signals with higher power requirements.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for use in environments where temperature fluctuations may occur.

Maximum Collector-Emitter Voltage: 250 V

Capable of handling high voltage levels, making it suitable for applications that require amplification of signals with higher voltage requirements.

Transistor Element Material: SILICON

Provides good performance and reliability, ensuring consistent operation over time.

Maximum Collector Current (IC): 0.05 A

Capable of handling higher current levels, making it suitable for applications that require amplification of signals with higher current requirements.

Nominal Transition Frequency (fT): 60 MHz

High transition frequency allows for fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF422G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF422G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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