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MPS751ZL1G

Onsemi

MPS751ZL1G by Onsemi

MPS751ZL1G by Onsemi is a PNP BJT transistor with 60V VCEO, 2A IC, and 75MHz fT. Ideal for amplifier applications due to its 1.5W power dissipation, hFE of 40, and operating temperature up to 150 °C. Packaged in a cylindrical body with through-hole terminals for easy installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

USA . 17,000 parts In-Stock

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Vyrian

USA . 5,521 parts In-Stock

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Digiode

USA . 2,098 parts In-Stock

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Pegasus Components GmbH

Germany . 1,700 parts In-Stock

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ComSIT Distribution GmbH

Germany . 714 parts In-Stock

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AZTECH Wire

Italy . 702 parts In-Stock

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$18.140

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QUARKTWIN TECHNOLOGY LTD

USA . 18,863 parts In-Stock

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Lixinc

USA . 18,084 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,838 parts In-Stock

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SupplyDigital Components

Austria . 3,461 parts In-Stock

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Problanco Electronics

Mexico . 3,127 parts In-Stock

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Kulean Microsystems

USA . 3,040 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

USA . 1,700 parts In-Stock

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Corphita

USA . 446 parts In-Stock

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Corohmni

South Africa . 241 parts In-Stock

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UHIMA Technologies

Türkiye . 111 parts In-Stock

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RC Electronics

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TANS Electronics

Latvia . 43 parts In-Stock

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Overview

Experience superior performance and reliability with the MPS751ZL1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality small signal bipolar junction transistors that are perfect for amplifier applications. The PNP configuration and high DC current gain ensure optimal functionality, while the durable plastic/epoxy package body provides long-lasting durability. With a maximum collector-emitter voltage of 60V and a peak reflow temperature of 260 °C, this transistor offers exceptional value and benefits to customers looking for high-performance components. Upgrade your electronic projects with the MPS751ZL1G and discover the difference Onsemi can make in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits and voltage regulation, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and ease of use, suitable for straightforward amplifier applications.

Transistor Application: AMPLIFIER

This transistor is specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into various circuit layouts.

Maximum Power Dissipation (Abs): 1.5 W

With a high power dissipation capability, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures reliable amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for applications where thermal management is important.

Maximum Collector-Emitter Voltage: 60 V

A high collector-emitter voltage rating allows for safe operation in circuits with higher voltage levels.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and performance, making this transistor a durable choice.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2A, this transistor can handle higher current levels without damage.

Nominal Transition Frequency (fT): 75 MHz

A higher transition frequency allows for faster switching speeds and improved performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS751ZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS751ZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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