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MPSA92RLRAG

Onsemi

MPSA92RLRAG by Onsemi

MPSA92RLRAG by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 300V, ideal for amplifier applications. Featuring a min. DC current gain of 25 and max. power dissipation of 0.625W, it operates at up to 150 °C. Its through-hole package style and cylindrical shape make it suitable for various electronic designs.

Median Price

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Lifecycle Status

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1k+

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Chip Stock

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LWI Electronics Inc

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A&K Electronics

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Rotakorn

Sweden . 650 parts In-Stock

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Bristol Electronics

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Digiode

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ACDS - Activité Composants Distribution Service

France . 40 parts In-Stock

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Holdelec - ElecDif-Pro

France . 40 parts In-Stock

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Prism Electronics

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AZTECH Wire

Italy . 43 parts In-Stock

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$10.680

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Component Stockers USA

USA . 234 parts In-Stock

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$99.990

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Lixinc

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TANS Electronics

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Overview

Enhance your electronic projects with the MPSA92RLRAG by Onsemi! Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers unparalleled quality and performance. Whether you're amplifying signals or building circuits, this PNP transistor is the perfect choice. Its high power dissipation, excellent DC current gain, and wide operating temperature range make it a versatile component for various applications. Trust Onsemi to deliver reliable and efficient products that bring value and benefits to your projects. Upgrade your electronics with the MPSA92RLRAG and experience superior performance like never before!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the transistor, making it suitable for long-term use.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into PNP transistor circuits, making it compatible with a variety of amplifier applications.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making this transistor easy to use for amplifier projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers reliable performance and quality sound output.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625 W, this transistor can handle high power levels effectively, ensuring efficient operation.

Minimum DC Current Gain (hFE): 25

The minimum DC current gain of 25 indicates good amplification capabilities, making this transistor suitable for amplifier circuits.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage of 300 V allows for flexibility and versatility in amplifier circuit design.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current levels, making it suitable for amplifier applications.

Nominal Transition Frequency (fT): 50 MHz

The nominal transition frequency of 50 MHz indicates good high-frequency performance, making this transistor ideal for audio amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA92RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA92RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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