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MPSA56RLRMG

Onsemi

MPSA56RLRMG by Onsemi

MPSA56RLRMG by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 0.5A, and min. DC current gain of 100. Ideal for amplifier applications due to its cylindrical package style, it has a max power dissipation of 0.625W and operates up to 150 °C temperature range.

Median Price

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Lifecycle Status

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4

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1k+

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Chip Stock

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NexGen Digital

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AZTECH Wire

Italy . 722 parts In-Stock

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Perfect Parts

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SupplyDigital Components

Austria . 2,083 parts In-Stock

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TANS Electronics

Latvia . 1,432 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 564 parts In-Stock

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Türkiye . 252 parts In-Stock

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Kulean Microsystems

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Overview

Enhance your electronic projects with the MPSA56RLRMG by Onsemi! This high-quality Small Signal Bipolar Junction Transistor offers unmatched performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is perfect for amplifier applications. With a maximum power dissipation of 0.625 W and a minimum DC current gain of 100, this transistor delivers exceptional value and efficiency. Trust Onsemi to provide top-of-the-line components for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging provides good insulation and protection against external elements, making the transistor durable and reliable.

Polarity or Channel Type: PNP

PNP transistors are often used in high-side switching applications and can easily interface with other PNP devices, providing flexibility in circuit design.

Configuration: SINGLE

Single configuration transistors are simple to use and suitable for basic amplifier circuits, making them a good choice for straightforward applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor is optimized for providing amplification with minimal distortion, making it ideal for audio and signal processing circuits.

Maximum Power Dissipation (Abs): 0.625 W

With a relatively high power dissipation rating, this transistor can handle moderate power levels without overheating, ensuring stable operation in various applications.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating allows this transistor to be used in circuits with higher voltage levels, increasing its versatility and applicability in different designs.

Nominal Transition Frequency (fT): 50 MHz

The high transition frequency indicates that this transistor can handle high-frequency signals effectively, making it suitable for applications that require fast switching speeds and high bandwidth.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA56RLRMG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA56RLRMG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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