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MPSA42RLRPG

Onsemi

MPSA42RLRPG by Onsemi

MPSA42RLRPG by Onsemi is a NPN BJT transistor with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for amplifier applications, it has a min hFE of 40 and can operate up to 150°C. The package is cylindrical with through-hole terminals made of tin silver copper.

Median Price

$0.087

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IBS Electronics

USA . 111,691 parts In-Stock

1+ parts

$0.080

100+ parts

-

1k+ parts

$0.102

10k+ parts

$0.113

111,691

$0.080

-

$0.102

$0.113

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.093

100+ parts

-

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10

$0.093

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Chip Stock

USA . 63,000 parts In-Stock

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63,000

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Vyrian

USA . 13,264 parts In-Stock

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13,264

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R&J Components

USA . 1,755 parts In-Stock

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1,755

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Digiode

USA . 1,752 parts In-Stock

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1,752

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 317 parts In-Stock

1+ parts

$0.029

100+ parts

-

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317

$0.029

-

-

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Argo Parts USA

USA . 1,323 parts In-Stock

1+ parts

$0.093

100+ parts

-

1k+ parts

-

10k+ parts

$0.090

1,323

$0.093

-

-

$0.090

Continental Prestige Electronics

USA . 815 parts In-Stock

1+ parts

$0.093

100+ parts

-

1k+ parts

-

10k+ parts

$0.091

815

$0.093

-

-

$0.091

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.093

100+ parts

-

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100

$0.093

-

-

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Aztec Data Supply Inc.

USA . 188 parts In-Stock

1+ parts

$1.011

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188

$1.011

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Ampacity Inc.

Singapore . 1,541 parts In-Stock

1+ parts

$13.050

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1,541

$13.050

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AZTECH Wire

Italy . 781 parts In-Stock

1+ parts

$14.985

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781

$14.985

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Semicontronic

India . 1,375 parts In-Stock

1+ parts

$17.050

100+ parts

$16.624

1k+ parts

$16.538

10k+ parts

-

1,375

$17.050

$16.624

$16.538

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Kepictronics

USA . 52,000 parts In-Stock

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52,000

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Perfect Parts

USA . 17,873 parts In-Stock

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17,873

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Problanco Electronics

Mexico . 7,156 parts In-Stock

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7,156

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Kulean Microsystems

USA . 3,398 parts In-Stock

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3,398

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TANS Electronics

Latvia . 3,368 parts In-Stock

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3,368

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Corphita

USA . 1,945 parts In-Stock

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1,945

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SupplyDigital Components

Austria . 1,311 parts In-Stock

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1,311

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UHIMA Technologies

Türkiye . 350 parts In-Stock

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350

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Overview

Unlock the potential of your electronic projects with the MPSA42RLRPG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality small signal bipolar junction transistors that are perfect for amplifier applications. The NPN configuration and high DC current gain ensure optimal performance, while the durable plastic/epoxy package guarantees long-lasting reliability. Experience the benefits of this product's high power dissipation, wide operating temperature range, and superior collector-emitter voltage. Elevate your designs with the MPSA42RLRPG and bring your creations to life with confidence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides a durable and rugged housing for the transistor, ensuring longevity and reliability in various applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into circuits and offers good amplification properties, making it suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making the transistor easy to use in various amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers excellent amplification properties and performance.

Package Shape: ROUND

The round package shape allows for easy mounting and soldering, making the transistor convenient to use in PCB layouts.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides strong mechanical connections and ease of soldering, making it suitable for through-hole PCB assembly.

No. of Terminals: 3

The 3 terminals offer versatility in circuit connections and enable various amplifier configurations to be implemented with ease.

Maximum Power Dissipation (Abs): 0.625 W

The high maximum power dissipation rating of 0.625 W allows for reliable operation under heavy load conditions, ensuring stability and performance.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers compactness and efficient heat dissipation, allowing for space-saving and reliable operation.

Minimum DC Current Gain (hFE): 40

The minimum DC current gain of 40 ensures consistent and reliable amplification performance, making it suitable for various amplifier applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, the transistor can withstand elevated temperatures, ensuring reliable performance in demanding environments.

Maximum Collector-Emitter Voltage: 300 V

The maximum collector-emitter voltage rating of 300 V allows for safe operation in high voltage circuits, enhancing versatility in amplifier applications.

Transistor Element Material: SILICON

Silicon material in the transistor element offers high performance and reliability, ensuring stable operation and long-term durability.

Maximum Collector Current (IC): 0.5 A

The maximum collector current rating of 0.5 A allows for high current handling capability, making it suitable for a wide range of amplifier applications.

Terminal Finish: TIN SILVER COPPER

The terminal finish of TIN SILVER COPPER offers excellent conductivity and corrosion resistance, ensuring reliable and robust connections in circuits.

Terminal Position: BOTTOM

The bottom terminal position allows for easy PCB mounting and soldering, simplifying assembly and integration into electronic circuits.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures reliable soldering and allows for high-temperature processing, making it suitable for automated assembly.

Nominal Transition Frequency (fT): 50 MHz

The high nominal transition frequency of 50 MHz allows for fast switching and high-frequency operation, making it suitable for high-speed amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA42RLRPG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA42RLRPG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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