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MPSA43ZL1G

Onsemi

MPSA43ZL1G by Onsemi

MPSA43ZL1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 200V, ideal for low-power applications. Featuring a min. DC current gain of 40 and max. operating temp of 150°C, it's suitable for small signal amplification in various electronic circuits. With a peak reflow temp of 260°C and nominal transition frequency of 50MHz, this transistor offers reliable performance in through-hole configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 7,399 parts In-Stock

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Digiode

USA . 1,308 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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AZTECH Wire

Italy . 215 parts In-Stock

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$8.457

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Ampacity Inc.

Singapore . 481 parts In-Stock

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$47.050

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QUARKTWIN TECHNOLOGY LTD

USA . 11,126 parts In-Stock

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Continental Prestige Electronics

USA . 6,779 parts In-Stock

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Problanco Electronics

Mexico . 3,975 parts In-Stock

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TANS Electronics

Latvia . 3,956 parts In-Stock

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Kulean Microsystems

USA . 3,760 parts In-Stock

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Corphita

USA . 2,218 parts In-Stock

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SupplyDigital Components

Austria . 1,413 parts In-Stock

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Argo Parts USA

USA . 827 parts In-Stock

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UHIMA Technologies

Türkiye . 779 parts In-Stock

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Aranea Global

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Corohmni

South Africa . 320 parts In-Stock

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Overview

Unlock the power of innovation with the Onsemi MPSA43ZL1G small signal bipolar junction transistor. Crafted by a trusted manufacturer, this NPN transistor offers unparalleled quality and reliability for a wide range of applications. From amplifiers to oscillator circuits, this versatile component delivers exceptional performance and efficiency. Embrace the future of electronics with the value and benefits that the MPSA43ZL1G brings to your projects. Trust in Onsemi to provide cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, perfect for a variety of electronic applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile for a range of circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation, making it easier to integrate this transistor into electronic devices.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625 W, this transistor can handle moderate power levels without overheating or performance degradation.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this transistor to withstand harsh environmental conditions and prolonged use.

Maximum Collector-Emitter Voltage: 200 V

The high collector-emitter voltage rating of 200 V provides a wide margin of safety and versatility in voltage applications.

Nominal Transition Frequency (fT): 50 MHz

With a high nominal transition frequency of 50 MHz, this transistor is capable of fast switching and high-frequency amplification, ideal for high-performance circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA43ZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

200 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA43ZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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