Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395
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MMBTA20LT1G
Onsemi
MMBTA20LT1G by Onsemi is a NPN BJT transistor with 3 terminals, suitable for amplifier applications. It has a max power dissipation of 0.225W, hFE of 40, and operates at up to 150 °C. With a max collector-emitter voltage of 40V and peak reflow temp of 260°C, it offers high performance in small outline packages for various electronic designs.
.1 A
40 V
SINGLE
40
TO-236AB
R-PDSO-G3
e3
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
NPN
.225 W
Not Qualified
Other Transistors
YES
TIN
GULL WING
DUAL
30
AMPLIFIER
SILICON
125 MHz
MMBTA43LT1G
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .5 A;
.5 A
200 V
50 MHz
MMBTA70LT1G
MMBTA70LT1G by Onsemi is a PNP BJT transistor with 40V VCEO, 0.1A IC, and 125MHz fT. It is ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.225W. The GULL WING terminal form and SMALL OUTLINE package make it suitable for surface mount designs requiring compact components.
PNP
MMBTA93LT1G
MMBTA93LT1G by Onsemi is a PNP BJT transistor with 200V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.3W. Its GULL WING terminals and compact SMALL OUTLINE package make it suitable for surface mount designs.
25
TO-236
.3 W
MPS2222ARLRMG
MPS2222ARLRMG by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 35, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 285ns) and high transition frequency (fT: 300MHz).
.6 A
35
TO-92
O-PBCY-T3
e1
ROUND
CYLINDRICAL
.625 W
NO
Tin/Silver/Copper (Sn/Ag/Cu)
THROUGH-HOLE
BOTTOM
SWITCHING
300 MHz
285 ns
35 ns
MPS2222AZL1G
MPS2222AZL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 35, and max. operating temp of 150 °C. Ideal for switching applications due to its max collector-emitter voltage of 40V and transition frequency of 300MHz in a cylindrical package style.
EUROPEAN PART NUMBER
TIN SILVER COPPER
MPS2222RLRAG
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .6 A;
30 V
1.5 W
250 MHz
MPS2222RLRMG
MPS2222RLRMG by Onsemi is a NPN BJT transistor with 30V VCEO, 0.6A IC, and 250MHz fT. Ideal for switching applications, it has a max power dissipation of 1.5W in a cylindrical package with through-hole terminals.
MPS2222RLRPG
MPS2222RLRPG by Onsemi is a NPN BJT transistor with 30V VCEO, 0.6A IC, and 250MHz fT. Ideal for switching applications, it has a max power dissipation of 1.5W and operates up to 150 °C. Its through-hole package makes it suitable for various electronic designs.
MPS2369G
MPS2369G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 15V and max collector current of 0.2A. With a transition frequency of 500MHz, it operates b/w -55 to 150 °C, making it suitable for various electronic circuits.
.2 A
15 V
20
-55 Cel
500 MHz
18 ns
12 ns
MPS2369ARLRPG
MPS2369ARLRPG by Onsemi is a NPN BJT transistor with 3 terminals and max power dissipation of 0.36W. It has a min DC current gain of 20, max collector-emitter voltage of 15V, and nominal transition frequency of 500MHz. Ideal for switching applications due to its fast turn on/off times (ton: 12ns, toff: 18ns) and peak reflow temp of 260 °C.
.36 W
MPS2369RLRAG
MPS2369RLRAG by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 20, and fT of 500MHz. Ideal for switching applications due to its single configuration and max. collector-emitter voltage of 15V.
MPS2907ARLRMG
MPS2907ARLRMG by Onsemi is a PNP BJT transistor for switching applications. It has a max collector-emitter voltage of 60V, DC current gain of 100, and transition frequency of 200MHz. With a power dissipation of 0.36W, it operates at up to 150 °C making it suitable for various electronic circuits.
60 V
100
200 MHz
100 ns
45 ns
MPS2907AZL1G
MPS2907AZL1G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.36W, hFE of 100, and max. collector-emitter voltage of 60V. Ideal for switching applications due to its fast turn on/off times (45ns/100ns) and high transition frequency (200MHz).
O-PBCY-W3
WIRE
MPS3638AG
MPS3638AG by Onsemi is a PNP BJT transistor with 3 terminals, max power dissipation of 0.625W, and hFE of 20. Ideal for switching applications due to its max collector-emitter voltage of 25V and fast turn-on/off times. With a nominal transition frequency of 150MHz, it offers efficient performance in various electronic circuits.
25 V
150 MHz
170 ns
75 ns
MPS3646RLRAG
MPS3646RLRAG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 15V and max current of 0.3A. It has a min DC current gain of 15, ideal for switching applications with a transition frequency of 350MHz. The package style is cylindrical, suitable for through-hole mounting in various electronic circuits.
.3 A
15
350 MHz
28 ns
MPS4124G
MPS4124G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 60, and operates at up to 150 °C. With a max collector-emitter voltage of 25V and max collector current of 0.2A, it offers reliable performance in various electronic circuits.
60
170 MHz
MPS6521G
MPS6521G by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 25V and max current of 0.1A. With a min DC current gain of 300, it's ideal for amplifier applications at up to 150 °C operating temperature. The package style is cylindrical with through-hole terminals for easy installation.
LOW NOISE
300
340 MHz
MPS6523G
MPS6523G by Onsemi is a PNP BJT transistor with hFE of 300, fT of 340 MHz, and IC of 0.1 A. Ideal for amplifier applications due to its max power dissipation of 0.625 W and operating temperature up to 150°C in a cylindrical package.
MPS6560G
MPS6560G by Onsemi is a NPN BJT transistor with 3 terminals and 0.625W power dissipation. Ideal for amplifier applications, it has a max collector-emitter voltage of 25V, hFE of 50, and operates up to 150 °C.
50
60 MHz
MPS6724G
MPS6724G by Onsemi is a NPN Darlington BJT with 1W power dissipation, 40V collector-emitter voltage, and 100MHz transition frequency. Ideal for applications requiring high DC current gain like amplifiers or drivers in electronic circuits.
1 A
DARLINGTON
4000
1 W
100 MHz
MPS6724RLRAG
MPS6724RLRAG by Onsemi is a NPN Darlington BJT with 1W power dissipation, 40V max collector-emitter voltage, and 100MHz transition frequency. Ideal for applications requiring high DC current gain like amplifiers or drivers due to its 4000 min hFE. Package style is cylindrical with through-hole terminals.
MPS6725G
MPS6725G by Onsemi is a NPN Darlington BJT with 1W power dissipation, 4000 min. hFE, and 50V max. VCE. Ideal for applications requiring high current gain and low power consumption in through-hole configurations.
50 V
MPS6725RLRPG
MPS6725RLRPG by Onsemi is a NPN Darlington BJT with 1W power dissipation, 4000 min. hFE, and 50V max. VCE. Ideal for applications requiring high current gain and low power consumption in through-hole configurations.
MPS6727G
MPS6727G by Onsemi is a PNP BJT with 1W power dissipation, 40V max. collector-emitter voltage, and 50MHz transition frequency. Ideal for amplifier applications due to its single configuration and through-hole terminal form in a cylindrical package style.
MPS6729G
MPS6729G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 1W, and max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its single configuration and silicon element material, operating at up to 150 °C with a min DC current gain of 50 (hFE).
80 V
MPS8098G
MPS8098G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, max collector-emitter voltage of 60V, and min DC current gain of 75. This through-hole transistor operates up to 150°C and has a nominal transition frequency of 150MHz.
75
MPS8098RLRAG
MPS8098RLRAG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a max power dissipation of 0.625W, hFE of 75, and max operating temp of 150 °C. With a max collector-emitter voltage of 60V and max collector current of 0.5A, it's suitable for various electronic circuits.
MPS8099G
MPS8099G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 75, and can handle up to 80V collector-emitter voltage. With a transition frequency of 150MHz and operating temp of 150°C, it's suitable for various electronic circuits requiring high-speed switching capabilities.
MPS8099RLRAG
MPS8099RLRAG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 75, and fT of 150MHz. With a max operating temp of 150°C and VCE of 80V, it's suitable for various electronic circuits.
MPS8099RLRMG
MPS8099RLRMG by Onsemi is a NPN BJT transistor with 3 terminals and 0.5A max collector current. With hFE of 75, it's ideal for amplifier applications. Operating at up to 150 °C, it has a max power dissipation of 0.625W in a cylindrical package.
MPS8099RLRPG
MPS8099RLRPG by Onsemi is a NPN BJT transistor with 3 terminals and max. power dissipation of 0.625W. With hFE of 75, it operates up to 150°C and handles max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its nominal transition frequency of 150MHz in a cylindrical package style.
MPS8598RLRAG
MPS8598RLRAG by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.625W, and min. DC current gain of 75. It is used in amplifier applications due to its max. collector-emitter voltage of 60V and nominal transition frequency of 150MHz.
MPS8599G
MPS8599G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.625W, and min. DC current gain of 75. It is used in amplifier applications due to its max. collector-emitter voltage of 80V and nominal transition frequency of 150MHz.
MPSA05RLRAG
MPSA05RLRAG by Onsemi is a NPN BJT transistor with 3 terminals and max. power dissipation of 0.625W. It has a min. DC current gain of 100, max. operating temp of 150 °C, and max. collector-emitter voltage of 60V. Ideal for amplifier applications due to its SILICON element material and cylindrical package style.
MPSA06RLG
MPSA06RLG by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 100, and max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its high transition frequency of 100MHz and max. operating temp. of 150 °C in a cylindrical package style.
MPSA18G
MPSA18G by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and max current of 0.2A. With a min DC current gain of 500, it's ideal for amplifier applications. This through-hole transistor has a max power dissipation of 0.625W and operates up to 150 °C.
45 V
500
160 MHz
MPSA18RLRMG
MPSA18RLRMG by Onsemi is a NPN BJT transistor with 500 min hFE, 45V VCEO, and 160MHz fT. Ideal for amplifier applications due to its 0.2A IC, 0.625W Pdiss, and cylindrical package style. Suitable for through-hole mounting with bottom terminal position.
MPSA27RLRAG
MPSA27RLRAG by Onsemi is a NPN Darlington transistor with hFE of 10000, VCEO of 60V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150 °C and has an fT of 125MHz. The package is cylindrical with through-hole terminals made of tin silver copper.
10000
MPSA28G
MPSA28G by Onsemi is a NPN Darlington BJT with hFE of 10000, IC of 0.5A, and fT of 200MHz. Ideal for applications requiring high current gain and frequency response in through-hole configurations.
MPSA29G
MPSA29G by Onsemi is a NPN Darlington BJT with hFE of 10000, VCEO of 100V, and IC of 0.5A. Ideal for amplifier applications due to its high gain and temperature range up to 150 °C. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.
100 V
MPSA56RLRPG
MPSA56RLRPG by Onsemi is a PNP BJT with max. collector-emitter voltage of 80V, max. collector current of 0.5A, and min. DC current gain of 100. Ideal for amplifier applications due to its high transition frequency of 50MHz and max. power dissipation of 0.625W in a cylindrical package style.
MPSA56ZL1G
MPSA56ZL1G by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 0.5A, ideal for amplifier applications. It has a min. DC current gain of 100, operates up to 150 °C, and features a cylindrical package style for through-hole mounting.
MPSA70RLRMG
MPSA70RLRMG by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for amplifier applications due to its cylindrical package style, it operates at up to 150 °C and has a nominal transition frequency of 125MHz.
MPSA75RLRAG
MPSA75RLRAG by Onsemi is a PNP Darlington BJT transistor with hFE of 10000, VCEO of 40V, and IC of 0.5A. Ideal for amplifier applications due to its high gain and temperature range up to 150 °C. Packaged in cylindrical shape with through-hole terminals for easy installation.
MPSA77RLRAG
MPSA77RLRAG by Onsemi is a PNP Darlington BJT transistor with hFE of 10000, VCEO of 60V, and IC of 0.5A. Ideal for amplifier applications due to its high gain and operating temperature up to 150 °C. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.
MPSW05G
The Onsemi MPSW05G is a NPN BJT transistor with 60V VCEO, 0.5A IC, and 1W Ptot. Ideal for amplifier applications due to its hFE of 60 and fT of 50MHz. Packaged in a cylindrical shape with through-hole terminals for easy installation.
TO-226
MPSW13RLRAG
MPSW13RLRAG by Onsemi is a NPN Darlington BJT with 1A IC, 125MHz fT, and 10000 hFE. Ideal for applications requiring high current gain and frequency response in through-hole configurations. Suitable for amplification circuits in electronic devices due to its high power dissipation of 1W and operating temperature up to 150 °C.
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