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MPS2222RLRMG

Onsemi

MPS2222RLRMG by Onsemi

MPS2222RLRMG by Onsemi is a NPN BJT transistor with 30V VCEO, 0.6A IC, and 250MHz fT. Ideal for switching applications, it has a max power dissipation of 1.5W in a cylindrical package with through-hole terminals.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 16,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

16,000

-

$0.053

$0.044

$0.039

DigiKey

USA . 16,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.070

16,000

-

-

-

$0.070

Verical

USA . 16,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

16,000

-

-

-

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,157 parts In-Stock

1+ parts

$0.041

100+ parts

-

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2,157

$0.041

-

-

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DigiKey Marketplace

USA . 16,000 parts In-Stock

1+ parts

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100+ parts

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16,000

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-

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Vyrian

USA . 7,368 parts In-Stock

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7,368

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,468 parts In-Stock

1+ parts

$0.039

100+ parts

-

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2,468

$0.039

-

-

-

Corohmni

South Africa . 122 parts In-Stock

1+ parts

$0.043

100+ parts

-

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122

$0.043

-

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AZTECH Wire

Italy . 181 parts In-Stock

1+ parts

$17.460

100+ parts

-

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181

$17.460

-

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QUARKTWIN TECHNOLOGY LTD

USA . 17,247 parts In-Stock

1+ parts

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17,247

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Continental Prestige Electronics

USA . 16,000 parts In-Stock

1+ parts

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100+ parts

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$0.039

16,000

-

-

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$0.039

Authorized Procurement Solutions

USA . 12,000 parts In-Stock

1+ parts

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100+ parts

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12,000

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SupplyDigital Components

Austria . 7,157 parts In-Stock

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7,157

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Kulean Microsystems

USA . 6,278 parts In-Stock

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6,278

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Problanco Electronics

Mexico . 3,193 parts In-Stock

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3,193

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TANS Electronics

Latvia . 2,670 parts In-Stock

1+ parts

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2,670

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UHIMA Technologies

Türkiye . 521 parts In-Stock

1+ parts

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521

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-

Overview

Discover the power of the MPS2222RLRMG by Onsemi, a top-quality Small Signal Bipolar Junction Transistor designed for high-performance switching applications. Manufactured with precision and expertise by Onsemi, this NPN transistor offers customers unmatched reliability and efficiency. With a maximum collector-emitter voltage of 30V and a minimum DC current gain of 30, this transistor is perfect for a wide range of electronic projects. Experience the value and benefits of the MPS2222RLRMG and take your designs to the next level with Onsemi's superior technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching circuits, offering reliable performance.

Configuration: SINGLE

Simplified design with a single transistor for ease of use in circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Maximum Power Dissipation (Abs): 1.5 W

With a high power dissipation capability, this transistor can handle demanding loads without overheating.

Terminal Form: THROUGH-HOLE

Easily mounted on circuit boards, providing a secure connection for reliable performance.

Maximum Collector-Emitter Voltage: 30 V

Suitable for low-voltage applications where a maximum voltage of 30 V is required.

Maximum Collector Current (IC): 0.6 A

Capable of handling a maximum collector current of 0.6 A, making it suitable for various current requirements.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for fast switching speeds, ideal for applications requiring quick response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2222RLRMG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS2222RLRMG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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