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MPS2222RLRPG

Onsemi

MPS2222RLRPG by Onsemi

MPS2222RLRPG by Onsemi is a NPN BJT transistor with 30V VCEO, 0.6A IC, and 250MHz fT. Ideal for switching applications, it has a max power dissipation of 1.5W and operates up to 150 °C. Its through-hole package makes it suitable for various electronic designs.

Median Price

$0.159

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 20,000 parts In-Stock

1+ parts

$0.204

100+ parts

$0.136

1k+ parts

$0.082

10k+ parts

$0.073

20,000

$0.204

$0.136

$0.082

$0.073

Rochester

USA . 93,996 parts In-Stock

1+ parts

-

100+ parts

$0.159

1k+ parts

$0.132

10k+ parts

$0.117

93,996

-

$0.159

$0.132

$0.117

Verical

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.147

60,000

-

-

-

$0.147

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 170 parts In-Stock

1+ parts

$0.124

100+ parts

-

1k+ parts

-

10k+ parts

-

170

$0.124

-

-

-

Vyrian

USA . 1,963 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,963

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,094 parts In-Stock

1+ parts

$0.117

100+ parts

-

1k+ parts

-

10k+ parts

-

1,094

$0.117

-

-

-

Component Stockers USA

USA . 71,371 parts In-Stock

1+ parts

$0.130

100+ parts

$0.120

1k+ parts

$0.110

10k+ parts

$0.110

71,371

$0.130

$0.120

$0.110

$0.110

Corohmni

South Africa . 295 parts In-Stock

1+ parts

$0.130

100+ parts

-

1k+ parts

-

10k+ parts

-

295

$0.130

-

-

-

AZTECH Wire

Italy . 906 parts In-Stock

1+ parts

$20.600

100+ parts

-

1k+ parts

-

10k+ parts

-

906

$20.600

-

-

-

Continental Prestige Electronics

USA . 93,996 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.117

10k+ parts

-

93,996

-

-

$0.117

-

QUARKTWIN TECHNOLOGY LTD

USA . 28,962 parts In-Stock

1+ parts

-

100+ parts

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28,962

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Problanco Electronics

Mexico . 3,495 parts In-Stock

1+ parts

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100+ parts

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3,495

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-

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Kulean Microsystems

USA . 3,136 parts In-Stock

1+ parts

-

100+ parts

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3,136

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-

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SupplyDigital Components

Austria . 322 parts In-Stock

1+ parts

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322

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TANS Electronics

Latvia . 141 parts In-Stock

1+ parts

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141

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UHIMA Technologies

Türkiye . 29 parts In-Stock

1+ parts

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29

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Overview

Discover the reliable performance and precision engineering of the MPS2222RLRPG by Onsemi. As a leading manufacturer in the industry, Onsemi produces high-quality Small Signal Bipolar Junction Transistors (BJT) like no other. Ideal for switching applications, this NPN transistor offers customers unparalleled value and benefits. With a maximum power dissipation of 1.5W and a maximum collector-emitter voltage of 30V, this transistor is designed to deliver exceptional performance and efficiency. Trust in Onsemi for all your electronic component needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides both durability and insulation for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces component count, making it easier to integrate into electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast switching speeds and low on-resistance, ideal for efficient power control.

Package Shape: ROUND

The round package shape allows for easy mounting and soldering onto circuit boards, making installation hassle-free.

No. of Terminals: 3

With three terminals, this transistor can be easily connected in a circuit for proper signal amplification and control.

Maximum Power Dissipation (Abs): 1.5 W

With a high maximum power dissipation, this transistor can handle larger power loads, ensuring stable operation under varying conditions.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance in various environments without risk of overheating.

Maximum Collector-Emitter Voltage: 30 V

The high maximum collector-emitter voltage rating ensures that this transistor can handle higher voltage applications without breakdown.

Transistor Element Material: SILICON

Silicon is a commonly used material for transistors due to its high conductivity, allowing for efficient signal amplification and control.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6 A, this transistor can handle moderate current loads, suitable for most small signal applications.

Nominal Transition Frequency (fT): 250 MHz

The high nominal transition frequency indicates fast response times and high-frequency performance, making this transistor ideal for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2222RLRPG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS2222RLRPG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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