Loading...

MPS2907ARLRMG

Onsemi

MPS2907ARLRMG by Onsemi

MPS2907ARLRMG by Onsemi is a PNP BJT transistor for switching applications. It has a max collector-emitter voltage of 60V, DC current gain of 100, and transition frequency of 200MHz. With a power dissipation of 0.36W, it operates at up to 150 °C making it suitable for various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,757 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,757

-

-

-

-

Digiode

USA . 1,987 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,987

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 333 parts In-Stock

1+ parts

$18.440

100+ parts

-

1k+ parts

-

10k+ parts

-

333

$18.440

-

-

-

Component Stockers USA

USA . 593 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

593

$99.990

-

-

-

Kulean Microsystems

USA . 7,831 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,831

-

-

-

-

TANS Electronics

Latvia . 6,551 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,551

-

-

-

-

Problanco Electronics

Mexico . 2,442 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,442

-

-

-

-

UHIMA Technologies

Türkiye . 850 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

850

-

-

-

-

Corphita

USA . 841 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

841

-

-

-

-

Corohmni

South Africa . 343 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

343

-

-

-

-

SupplyDigital Components

Austria . 165 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

165

-

-

-

-

Overview

Enhance your electronic projects with the MPS2907ARLRMG by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this PNP transistor boasts a single configuration ideal for switching applications. With a maximum collector-emitter voltage of 60V and a minimum DC current gain of 100, this transistor offers reliable performance and efficiency. Whether you're working on amplifiers, oscillators, or other electronic circuits, the MPS2907ARLRMG delivers exceptional value and precision. Upgrade your designs with this versatile component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring longevity and reliability in various operating conditions.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required for proper circuit operation.

Configuration: SINGLE

Simplified circuit design with a single transistor configuration.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient and reliable performance.

Maximum Power Dissipation (Abs): 0.36 W

Can handle a moderate amount of power dissipation without overheating, making it suitable for various applications.

Package Shape: ROUND

Compact and space-saving design that can be easily integrated into circuits with limited space.

Terminal Form: THROUGH-HOLE

Allows for easy and secure mounting onto circuit boards and soldering for reliable connections.

No. of Terminals: 3

Simple and straightforward 3-terminal configuration for easy integration into circuit designs.

Maximum Collector-Emitter Voltage: 60 V

Can handle relatively high voltage levels, expanding the range of possible applications.

Maximum Collector Current (IC): 0.6 A

Capable of handling moderate current levels, suitable for various switching applications.

Maximum Operating Temperature: 150 °C

Can operate reliably at elevated temperatures, providing flexibility in different operating environments.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures proper amplification and switching capabilities in circuits.

Transistor Element Material: SILICON

Silicon-based material provides reliable and consistent performance over extended periods.

Maximum Turn On Time (ton): 45 ns

Fast turn-on time for efficient switching operations in circuits.

Maximum Turn Off Time (toff): 100 ns

Fast turn-off time for quick and precise switching actions in circuits.

Terminal Finish: TIN SILVER COPPER

High-quality terminal finish for reliable electrical connections and soldering.

Terminal Position: BOTTOM

Bottom terminal position for easy and secure mounting onto PCBs.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes without compromising performance.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency for fast signal processing and switching speeds in circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2907ARLRMG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

100 ns

Maximum Turn On Time (ton):

45 ns

Trade Compliance

MPS2907ARLRMG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20