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MMBTA20LT1G

Onsemi

MMBTA20LT1G by Onsemi

MMBTA20LT1G by Onsemi is a NPN BJT transistor with 3 terminals, suitable for amplifier applications. It has a max power dissipation of 0.225W, hFE of 40, and operates at up to 150 °C. With a max collector-emitter voltage of 40V and peak reflow temp of 260°C, it offers high performance in small outline packages for various electronic designs.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 58,500 parts In-Stock

1+ parts

-

100+ parts

$0.030

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$0.025

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$0.023

58,500

-

$0.030

$0.025

$0.023

DigiKey

USA . 58,500 parts In-Stock

1+ parts

-

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$0.040

58,500

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$0.040

Verical

USA . 57,000 parts In-Stock

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57,000

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Distributors (In-Stock)

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Digiode

USA . 1,027 parts In-Stock

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$0.024

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1,027

$0.024

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DigiKey Marketplace

USA . 58,500 parts In-Stock

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58,500

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Chip Stock

USA . 23,000 parts In-Stock

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Vyrian

USA . 13,167 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 268 parts In-Stock

1+ parts

$0.022

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-

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268

$0.022

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Corohmni

South Africa . 127 parts In-Stock

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$0.025

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127

$0.025

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Component Stockers USA

USA . 47,489 parts In-Stock

1+ parts

$0.030

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$0.020

1k+ parts

$0.020

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$0.020

47,489

$0.030

$0.020

$0.020

$0.020

Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$1.332

100+ parts

$1.212

1k+ parts

$1.092

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-

150

$1.332

$1.212

$1.092

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AZTECH Wire

Italy . 293 parts In-Stock

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$18.410

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293

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Continental Prestige Electronics

USA . 58,500 parts In-Stock

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$0.020

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$0.020

QUARKTWIN TECHNOLOGY LTD

USA . 9,318 parts In-Stock

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Kulean Microsystems

USA . 3,006 parts In-Stock

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TANS Electronics

Latvia . 2,203 parts In-Stock

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SupplyDigital Components

Austria . 1,393 parts In-Stock

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Problanco Electronics

Mexico . 1,198 parts In-Stock

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UHIMA Technologies

Türkiye . 527 parts In-Stock

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527

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Overview

Experience the superior performance of the MMBTA20LT1G by Onsemi, a top-quality small signal Bipolar Junction Transistor perfect for amplifier applications. With Onsemi's renowned reputation for excellence in manufacturing, this NPN transistor offers reliability and precision in a compact package. Its high DC current gain, low power dissipation, and wide operating temperature range make it a versatile choice for various electronic projects. Trust Onsemi to deliver the quality and value you need for your next electronics design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, which is ideal for small signal applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this transistor suitable for such applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easy to integrate into existing amplifier setups.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in audio and signal amplification.

Surface Mount: YES

The surface mount capability allows for easy and convenient integration onto circuit boards, saving space and reducing assembly time.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact form factor, ideal for space-constrained designs.

No. of Terminals: 3

With 3 terminals, this transistor is easy to interface with other components in the circuit for efficient signal amplification.

Maximum Power Dissipation (Abs): 0.225 W

The high power dissipation capacity ensures reliable performance under heavy load conditions, making it suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes the footprint on the circuit board, making it ideal for compact designs.

Minimum DC Current Gain (hFE): 40

The minimum DC current gain of 40 ensures stable and consistent amplification of input signals, providing reliable performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures reliable operation even in high-temperature environments.

Maximum Collector-Emitter Voltage: 40 V

The high maximum collector-emitter voltage rating of 40V allows for amplification of higher voltage signals without risking damage to the transistor.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance and reliability, making this transistor a durable choice for amplifier applications.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A allows for efficient amplification of current signals, ensuring optimal performance in amplifier circuits.

Terminal Finish: TIN

The terminal finish of tin provides good solderability and conductivity, ensuring reliable electrical connections in the circuit.

Terminal Position: DUAL

The dual terminal position allows for flexible connection options, making it easy to integrate into various circuit configurations.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature of 30 seconds reduces the risk of thermal damage during the soldering process.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C ensures reliable solder joints, making it suitable for automated assembly processes.

Nominal Transition Frequency (fT): 125 MHz

The high nominal transition frequency of 125 MHz allows for efficient signal amplification and high-frequency response in amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBTA20LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBTA20LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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