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MPS2369G

Onsemi

MPS2369G by Onsemi

MPS2369G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 15V and max collector current of 0.2A. With a transition frequency of 500MHz, it operates b/w -55 to 150 °C, making it suitable for various electronic circuits.

Median Price

$0.113

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 13,318 parts In-Stock

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ABC Electronics Ltd.

UK . 3,374 parts In-Stock

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Digiode

USA . 2,402 parts In-Stock

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Bristol Electronics

USA . 780 parts In-Stock

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$0.113

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$0.068

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780

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$0.113

$0.068

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AZTECH Wire

Italy . 601 parts In-Stock

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$22.220

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601

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QUARKTWIN TECHNOLOGY LTD

USA . 17,044 parts In-Stock

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Perfect Parts

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Problanco Electronics

Mexico . 5,908 parts In-Stock

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SupplyDigital Components

Austria . 2,021 parts In-Stock

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Kulean Microsystems

USA . 1,741 parts In-Stock

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TANS Electronics

Latvia . 1,622 parts In-Stock

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UHIMA Technologies

Türkiye . 641 parts In-Stock

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Corohmni

South Africa . 464 parts In-Stock

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Corphita

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Overview

Discover the power of the MPS2369G by Onsemi, a high-quality small signal bipolar junction transistor perfect for switching applications. With its NPN configuration and maximum operating temperature of 150 °C, this transistor offers reliable performance and versatility. Whether you're designing electronic circuits or amplifiers, the MPS2369G delivers exceptional value and efficiency. Trust Onsemi's expertise in semiconductor manufacturing to provide you with a product that meets your needs and exceeds your expectations. Elevate your projects with the MPS2369G and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and reliability.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation, making it easier to integrate this transistor into electronic devices.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and low power dissipation, making it ideal for efficient signal control.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation, this transistor can handle power loads without overheating, ensuring reliability in operation.

Package Shape: ROUND

Round package shape allows for easy mounting and handling, making it convenient for assembly in various electronic devices.

No. of Terminals: 3

Having 3 terminals simplifies the connection process and reduces the chances of errors during installation.

Maximum Collector-Emitter Voltage: 15 V

High maximum collector-emitter voltage rating allows for safe operation in a wide range of voltage applications.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures reliable amplification of signals with low input current, making this transistor suitable for various signal processing tasks.

Nominal Transition Frequency (fT): 500 MHz

High nominal transition frequency enables high-frequency operation, making this transistor suitable for applications requiring fast response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2369G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

18 ns

Maximum Turn On Time (ton):

12 ns

Trade Compliance

MPS2369G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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