Loading...

MPS2907AZL1G

Onsemi

MPS2907AZL1G by Onsemi

MPS2907AZL1G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.36W, hFE of 100, and max. collector-emitter voltage of 60V. Ideal for switching applications due to its fast turn on/off times (45ns/100ns) and high transition frequency (200MHz).

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,902 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,902

-

-

-

-

Digiode

USA . 966 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

966

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 641 parts In-Stock

1+ parts

$13.370

100+ parts

-

1k+ parts

-

10k+ parts

-

641

$13.370

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 5,145 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,145

-

-

-

-

Problanco Electronics

Mexico . 4,526 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,526

-

-

-

-

TANS Electronics

Latvia . 2,132 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,132

-

-

-

-

Kulean Microsystems

USA . 1,318 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,318

-

-

-

-

Corphita

USA . 1,283 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,283

-

-

-

-

SupplyDigital Components

Austria . 1,104 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,104

-

-

-

-

UHIMA Technologies

Türkiye . 622 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

622

-

-

-

-

Corohmni

South Africa . 472 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

472

-

-

-

-

Overview

Enhance your electronic projects with the high-quality MPS2907AZL1G by Onsemi! Manufactured by a trusted industry leader, this Small Signal Bipolar Junction Transistor offers reliable performance and versatility for various applications such as switching. With its PNP configuration and maximum collector-emitter voltage of 60V, this transistor provides exceptional value and benefits to customers seeking precision and efficiency in their designs. Upgrade your circuits with the MPS2907AZL1G and experience superior performance like never before!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuits and complements other PNP components.

Configuration: SINGLE

Simplifies circuit design and implementation with a single transistor configuration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Package Shape: ROUND

The round package shape offers efficient heat dissipation and easy mounting options.

Terminal Form: WIRE

Wire terminals provide secure connections and ease of soldering during installation.

Maximum Power Dissipation (Abs): 0.36 W

With a high maximum power dissipation, it can handle various load conditions effectively.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers robustness and compactness for space-constrained applications.

Minimum DC Current Gain (hFE): 100

Ensures stable and consistent performance with a minimum DC current gain of 100.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 60 V

Offers a high maximum collector-emitter voltage for handling varying voltage requirements.

Transistor Element Material: SILICON

Silicon material enhances the reliability and performance of the transistor.

Maximum Turn On Time (ton): 45 ns

Fast turn on time ensures quick response in switching applications.

Maximum Collector Current (IC): 0.6 A

Able to handle high collector currents, suitable for medium-power applications.

Maximum Turn Off Time (toff): 100 ns

Fast turn off time aids in efficient switching operations.

Terminal Finish: TIN SILVER COPPER

Provides excellent conductivity and corrosion resistance for reliable connections.

Terminal Position: BOTTOM

Ease of installation and PCB layout with bottom terminal position.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during soldering processes.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency enables fast signal processing and switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2907AZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

100 ns

Maximum Turn On Time (ton):

45 ns

Trade Compliance

MPS2907AZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20