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MPS3638AG

Onsemi

MPS3638AG by Onsemi

MPS3638AG by Onsemi is a PNP BJT transistor with 3 terminals, max power dissipation of 0.625W, and hFE of 20. Ideal for switching applications due to its max collector-emitter voltage of 25V and fast turn-on/off times. With a nominal transition frequency of 150MHz, it offers efficient performance in various electronic circuits.

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 8,289 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 332 parts In-Stock

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$14.580

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Problanco Electronics

Mexico . 5,678 parts In-Stock

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TANS Electronics

Latvia . 5,205 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,813 parts In-Stock

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Kulean Microsystems

USA . 2,111 parts In-Stock

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Corphita

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Corohmni

South Africa . 397 parts In-Stock

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SupplyDigital Components

Austria . 259 parts In-Stock

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UHIMA Technologies

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Overview

Unlock the power of innovation with the MPS3638AG by Onsemi, a high-quality PNP small signal bipolar junction transistor. Manufactured by Onsemi, a leader in semiconductor technology, this switching transistor offers reliability and efficiency in a variety of applications. From amplification to switching, this single configuration transistor provides value and performance, with a maximum operating temperature of 150 °C and a nominal transition frequency of 150 MHz. Experience the benefits of superior quality and advanced technology with the MPS3638AG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this product versatile for different circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance in such scenarios.

Maximum Power Dissipation (Abs): 0.625 W

With a relatively high power dissipation capability, this transistor can handle moderate power loads effectively.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows this transistor to be used in various environments without overheating.

Maximum Collector-Emitter Voltage: 25 V

The high collector-emitter voltage rating ensures the transistor can handle higher voltage levels, increasing its versatility.

Minimum DC Current Gain (hFE): 20

A higher DC current gain value ensures better amplification and control, making this transistor suitable for many applications.

Maximum Collector Current (IC): 0.5 A

With a high collector current rating, this transistor can handle higher current loads, making it suitable for various applications.

Nominal Transition Frequency (fT): 150 MHz

The high transition frequency allows this transistor to operate effectively in high-frequency applications, ensuring reliable performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS3638AG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

170 ns

Maximum Turn On Time (ton):

75 ns

Trade Compliance

MPS3638AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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