Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395
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ZXTN4004ZQTA
Diodes Incorporated
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Terminal Form: FLAT; Package Shape: RECTANGULAR;
HIGH RELIABILITY
COLLECTOR
1 A
150 V
SINGLE
100
R-PSSO-F3
e3
1
3
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
NPN
AEC-Q101
YES
MATTE TIN
FLAT
SWITCHING
SILICON
ZTX751QSTZ
ZTX751QSTZ by Diodes Inc. is a PNP BJT with 1.5W power dissipation, 100 min hFE, and 2A max IC. Ideal for applications requiring high current amplification in a single configuration at up to 200°C operating temperature.
2 A
200 Cel
PNP
1.5 W
Other Transistors
NO
30
100 MHz
APT13003NZTR-G1
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1.5 A;
1.5 A
530 V
5
TO-92
O-PBCY-W3
150 Cel
-55 Cel
ROUND
CYLINDRICAL
1 W
MIL-STD-202
WIRE
BOTTOM
4 MHz
4150 ns
1000 ns
.4 V
NSVMMBT6517LT1G
Onsemi
NSVMMBT6517LT1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 350V, max. collector current of 0.1A, and min. DC current gain of 15. It is used in small outline packages for applications requiring high power dissipation and temp up to 150 °C.
.1 A
350 V
15
TO-236AB
R-PDSO-G3
.3 W
TIN
GULL WING
DUAL
40 MHz
NSVBC143TPDXV6T1G
NSVBC143TPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max VCEsat of 0.25V, min hFE of 160, and can handle up to 0.1A collector current. With a package style of small outline and operating temperature range from -55°C to 150°C, it's suitable for various electronic designs requiring compact and efficient transistor solutions.
BUILT IN BIAS RESISTOR
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
160
R-PDSO-F6
2
6
NPN AND PNP
.5 W
.25 V
2SAR554P5T100
ROHM
ROHM 2SAR554P5T100 is a PNP BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1.5A. Ideal for switching applications in small outline packages, it operates up to 150°C with a max fT of 340MHz.
15 pF
80 V
120
2 W
10
340 MHz
2SCR372P5T100R
ROHM 2SCR372P5T100R is a NPN BJT transistor with hFE of 180, suitable for amplifier applications. It has a max VCE of 120V and IC of 0.7A. With a fT of 220MHz, it operates up to 150°C making it ideal for high-frequency amplification in compact designs.
.7 A
120 V
180
AMPLIFIER
220 MHz
BC857BHZGT116
ROHM BC857BHZGT116 is a PNP BJT transistor with hFE of 210, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications due to its small outline package style and Gull Wing terminals for surface mounting. AEC-Q101 certified, suitable for automotive electronics requiring high reliability.
45 V
210
250 MHz
BCX19HZGT116
ROHM BCX19HZGT116 is a NPN BJT transistor with hFE of 40, VCE of 45V, and IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 250MHz. Features Gull Wing terminals in a small outline package suitable for surface mount assembly.
.5 A
40
BC860CWH6327
Infineon Technologies
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
LOW NOISE
420
NOT SPECIFIED
2SC3324-GR(TE85L,F
Toshiba
Toshiba's 2SC3324-GR(TE85L,F is a NPN BJT transistor with max power dissipation of 0.15W, min hFE of 200, and max IC of 0.1A. Ideal for small signal applications in electronics due to its single configuration and surface mount capability.
200
125 Cel
.15 W
NSVBC143ZPDXV6T5G
NSVBC143ZPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, featuring 2 elements with built-in resistor. With VCEsat of 0.25V, it operates in temperatures from -55 to 150 °C. Ideal for automotive applications due to AEC-Q101 standard compliance and max collector-emitter voltage of 50V.
BUILT IN BIAS RESISTOR RATIO IS 10
80
SSM2212CPZ-RL
Analog Devices
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .02 A; Package Style (Meter): CHIP CARRIER;
.02 A
40 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
S-PQCC-N16
16
SQUARE
CHIP CARRIER
Matte Tin (Sn) - annealed
NO LEAD
QUAD
200 MHz
DMN61D9UDW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .41 W; Maximum Feedback Capacitance (Crss): 2.5 pF; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
60 V
.35 A
3.5 ohm
METAL-OXIDE SEMICONDUCTOR
2.5 pF
R-PDSO-G6
ENHANCEMENT MODE
N-CHANNEL
.41 W
DMN61D9UDW-7
DMN61D9UDW-7 by Diodes Inc. is a N-CHANNEL BJT with 60V DS Breakdown Voltage, 0.35A ID, and 3.5 ohm RDS(on). Ideal for SWITCHING applications in small outline packages, operating from -55 to 150 °C.
RN1406S,LF(D
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;
BUILT IN BIAS RESISTANCE RATIO IS 10
SINGLE WITH BUILT-IN RESISTOR
RN2402S,LF(D
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;
BUILT IN BIAS RESISTANCE RATIO IS 1
50
2SA1162S-GR,LF(D
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Collector Current (IC): .15 A; Additional Features: LOW NOISE;
.15 A
80 MHz
2SA1162S-Y,LF(D
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Collector Current (IC): .15 A; No. of Terminals: 3;
2SC5886A(T6L1,NQ)
Toshiba's 2SC5886A NPN transistor has a hFE of 200, VCE of 50V, and IC of 5A. Ideal for switching applications, it is a surface-mount device with Gull Wing terminals in a small outline package.
5 A
R-PSSO-G2
2SD1223(TE16L1,NQ)
Toshiba's 2SD1223 NPN BJT features a min hFE of 1000, max VCE of 80V, and max IC of 4A. Ideal for switching applications, this Darlington transistor with built-in diode and resistor comes in a small outline package with gull wing terminals.
4 A
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
1000
2SA1312-GR(TE85L,F
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;
MMBT4401-AU_R1_000A1
Panjit International
Panjit International's MMBT4401-AU_R1_000A1 is a NPN BJT transistor for switching applications. With VCEsat of 0.75V, hFE of 100, and IC of 0.6A, it operates in temperatures from -55 to 150 °C. This small outline package with Gull Wing terminals suits high-speed switching needs up to 250MHz.
.6 A
6.5 pF
.225 W
255 ns
35 ns
.75 V
NSVBCW32LT1G
NSVBCW32LT1G by Onsemi is a NPN BJT with 32V VCEO, 0.1A IC, and hFE of 200. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and 150 °C max operating temp.
32 V
TO-236
DTC144EMFHAT2L
ROHM DTC144EMFHAT2L is a NPN BJT with built-in resistor, ideal for switching applications. Features include hFE of 68, VCE of 50V, and IC of 0.1A. Its small outline package makes it suitable for surface mount designs in automotive electronics.
68
R-PDSO-F3
e2
BIP General Purpose Small Signal
TIN COPPER
UMH2NFHATN
ROHM UMH2NFHATN is a NPN BJT with 2 elements & built-in resistor. It has hFE of 68, VCE of 50V, and fT of 250MHz. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and Gull Wing terminals for surface mounting.
NSVMSB1218A-RT1G
NSVMSB1218A-RT1G by Onsemi is a PNP BJT transistor for amplifier applications. It has VCEsat of 0.5V, hFE of 210, and IC of 0.1A. With a max operating temperature of 150 °C, it comes in a small outline package with gull wing terminals.
.5 V
BCX6910H6327XTSA1
BCX6910H6327XTSA1 by Infineon is a PNP BJT transistor with 20V VCE, 1A IC, and 100MHz fT. Ideal for amplifier applications due to its high hFE of 85. It comes in a small outline package with flat terminals suitable for surface mount assembly.
20 V
85
BC847BW/SNF
Nexperia
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
Tin (Sn)
BC847BW/SNX
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1;
BC847CW/MIF
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;
BC847CW/MIX
BC847CW/SNF
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;
BC847CW/SNX
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 30;
NMB2227AH
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 30;
SEPARATE, 2 ELEMENTS
75
AEC-Q101; IEC-60134
300 MHz
250 ns
NMB2227AZ
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Package Style (Meter): SMALL OUTLINE;
PDTB113EUF
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; JESD-609 Code: e3;
33
140 MHz
PDTB114EUF
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;
70
PDTB123EUF
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; Peak Reflow Temperature (C): 260;
PDTB123EUX
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 50 V;
PDTB123YUX
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;
BUILT IN BIAS RESISTANCE RATIO IS 4.55
PDTD113EUF
The Nexperia PDTD113EUF is a NPN BJT transistor with built-in resistor for switching applications. It has a hFE of 33, Vce of 50V, and IC of 0.5A. This small outline package with gull wing terminals is surface mountable and made of silicon, suitable for high-frequency operations up to 225MHz.
225 MHz
PDTD113EUX
The Nexperia PDTD113EUX is a NPN BJT transistor with built-in resistor for switching applications. It has hFE of 33, VCE of 50V, and IC of 0.5A. This small outline package features Gull Wing terminals and operates at a transition frequency of 225MHz.
PDTD113ZUF
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 225 MHz; Maximum Collector Current (IC): .5 A; JESD-609 Code: e3;
PDTD114ETVL
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 225 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;
PDTD114EUF
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 225 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;
PDTD123EUX
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 225 MHz; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR;
PDTD123YUF
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 225 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
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