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PDTD113EUX

Nexperia

PDTD113EUX by Nexperia

The Nexperia PDTD113EUX is a NPN BJT transistor with built-in resistor for switching applications. It has hFE of 33, VCE of 50V, and IC of 0.5A. This small outline package features Gull Wing terminals and operates at a transition frequency of 225MHz.

Median Price

$0.095

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 480 parts In-Stock

1+ parts

$0.531

100+ parts

$0.193

1k+ parts

$0.107

10k+ parts

-

480

$0.531

$0.193

$0.107

-

Rochester

USA . 42,000 parts In-Stock

1+ parts

-

100+ parts

$0.095

1k+ parts

$0.079

10k+ parts

$0.070

42,000

-

$0.095

$0.079

$0.070

Verical

USA . 39,000 parts In-Stock

1+ parts

-

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10k+ parts

$0.088

39,000

-

-

-

$0.088

Farnell

UK . 1,460 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.054

10k+ parts

$0.045

1,460

-

$0.066

$0.054

$0.045

Element14

Singapore . 1,460 parts In-Stock

1+ parts

-

100+ parts

$0.141

1k+ parts

$0.060

10k+ parts

$0.049

1,460

-

$0.141

$0.060

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 128,000 parts In-Stock

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128,000

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Vyrian

USA . 7,887 parts In-Stock

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7,887

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 4,732 parts In-Stock

1+ parts

$0.040

100+ parts

$0.030

1k+ parts

$0.030

10k+ parts

-

4,732

$0.040

$0.030

$0.030

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AZTECH Wire

Italy . 14,053 parts In-Stock

1+ parts

$0.100

100+ parts

-

1k+ parts

-

10k+ parts

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14,053

$0.100

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-

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Eastek

USA . 18,000 parts In-Stock

1+ parts

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18,000

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QUARKTWIN TECHNOLOGY LTD

USA . 14,547 parts In-Stock

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14,547

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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3,000

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Supply Digital

USA . 2,100 parts In-Stock

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2,100

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Continental Prestige Electronics

USA . 1,975 parts In-Stock

1+ parts

-

100+ parts

$0.054

1k+ parts

$0.050

10k+ parts

$0.033

1,975

-

$0.054

$0.050

$0.033

Overview

Elevate your electronic designs with the Nexperia PDTD113EUX Small Signal Bipolar Junction Transistor. Manufactured by industry-leading Nexperia, this NPN transistor is equipped with a built-in resistor, making it ideal for switching applications. With a high DC current gain and maximum collector-emitter voltage of 50V, this transistor offers exceptional performance and reliability. Whether you're working on automotive, industrial, or consumer electronics projects, the PDTD113EUX delivers unmatched value and efficiency. Upgrade your circuits today with Nexperia's superior quality components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material is durable and lightweight, making the transistor easy to handle and install.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, providing versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance in such scenarios.

Surface Mount: YES

Surface mount compatibility allows for easy integration into modern PCB designs and manufacturing processes.

Package Shape: RECTANGULAR

Rectangular shape provides efficient use of space on the PCB, allowing for compact circuit designs.

Terminal Form: GULL WING

Gull wing terminals provide strong and reliable connections, enhancing the overall reliability of the transistor.

No. of Terminals: 3

Three terminals help in efficient connectivity and ensure proper functioning within the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and contributes to a compact overall circuit design.

Minimum DC Current Gain (hFE): 33

With a minimum DC current gain of 33, this transistor ensures consistent and reliable amplification in circuits.

Maximum Collector-Emitter Voltage: 50 V

Supports a maximum collector-emitter voltage of 50V, making it suitable for a wide range of low voltage applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, ensuring stable and consistent operation.

Maximum Collector Current (IC): 0.5 A

Capable of handling a maximum collector current of 0.5A, making it suitable for low to medium power applications.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability, ensuring robust connections in the circuit.

Terminal Position: DUAL

Dual terminal position allows for easy integration into the circuit layout, providing flexibility in design.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, ensuring reliability during the manufacturing process.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C meets industry standards for soldering processes, ensuring proper mounting on the PCB.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality, reliability, and safety in automotive and general electronic applications.

Nominal Transition Frequency (fT): 225 MHz

High nominal transition frequency of 225 MHz indicates fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTD113EUX attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

33

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PDTD113EUX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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