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PDTD113ZT

NXP Semiconductors

PDTD113ZT by NXP Semiconductors

PDTD113ZT by NXP Semiconductors is a NPN BJT transistor with built-in resistor for switching applications. Features include 0.25W power dissipation, 70 min hFE, and 50V max collector-emitter voltage. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

Median Price

$0.123

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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RS (Exports)

UK . 8,500 parts In-Stock

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Chip Stock

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ComSIT Distribution GmbH

Germany . 73,280 parts In-Stock

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Rebound Electronics

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Vyrian

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Digiode

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Anansix

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Nova Conductors

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Semicontronic

India . 8,190 parts In-Stock

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Ampacity Inc.

Singapore . 8,146 parts In-Stock

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AZTECH Wire

Italy . 6,207 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,467 parts In-Stock

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$0.660

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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Corohmni

South Africa . 321 parts In-Stock

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Infinite Electronics LLP (Excess)

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Perfect Parts

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Lixinc

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Corphita

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Continental Prestige Electronics

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Supply Digital

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Argo Parts USA

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Overview

Unlock the power of innovation with the PDTD113ZT by NXP Semiconductors. Designed to deliver reliable performance, this small signal bipolar junction transistor is ideal for switching applications. With a maximum collector current of 0.5A and built-in resistor, this NPN transistor offers unparalleled efficiency and precision. Whether you're a hobbyist or a professional, the PDTD113ZT will elevate your projects to new heights. Trust in NXP Semiconductors to provide top-quality components that exceed expectations. Elevate your creations with the PDTD113ZT today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a good balance between cost and durability, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

Common NPN configuration allows for easy integration into existing circuit designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by including a built-in resistor, reducing the need for additional components.

Transistor Application: SWITCHING

Designed for efficient switching applications, providing reliable performance in various switching scenarios.

Surface Mount: YES

Ideal for space-constrained applications and automated assembly processes, offering convenience and versatility.

Package Shape: RECTANGULAR

Compact rectangular shape allows for efficient use of PCB space, enabling dense circuit layouts.

Terminal Form: GULL WING

Gull wing terminals ensure secure and reliable solder connections, improving overall durability.

Maximum Power Dissipation (Abs): 0.25 W

Efficient power dissipation rating allows for reliable operation without overheating, ensuring longevity.

Package Style (Meter): SMALL OUTLINE

Small outline package style further contributes to space savings on the PCB, enabling compact designs.

Minimum DC Current Gain (hFE): 70

High DC current gain supports stable and consistent amplification in various circuit configurations.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures reliable performance in diverse environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating provides protection against voltage spikes, enhancing overall reliability.

Transistor Element Material: SILICON

Silicon material offers excellent performance characteristics, ensuring reliable operation in various applications.

Maximum Collector Current (IC): 0.5 A

High collector current rating allows for reliable operation in applications requiring moderate current handling.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good solderability and corrosion resistance, ensuring robust electrical connections.

Terminal Position: DUAL

Dual terminal position supports versatile PCB layouts and enables flexible circuit design.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time minimizes thermal stress on the device during assembly, ensuring long-term reliability.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for efficient soldering processes, ensuring reliable connections and performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTD113ZT attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PDTD113ZT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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