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PDTD143XT,215

Nexperia

PDTD143XT,215 by Nexperia

PDTD143XT,215 by Nexperia is a NPN BJT with built-in resistor for switching applications. Features include hFE of 70, VCE of 50V, and fT of 225MHz. It comes in a small outline package with Gull Wing terminals for surface mount assembly.

Median Price

$0.025

Lifecycle Status

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3

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1k+

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Rochester

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Nova Conductors

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Vyrian

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Semicontronic

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Argo Parts USA

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Continental Prestige Electronics

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AZTECH Wire

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Ampacity Inc.

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Microchip USA

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Netroflash

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Overview

Upgrade your electronic devices with the PDTD143XT,215 Small Signal Bipolar Junction Transistor by Nexperia. Manufactured with precision and expertise, this NPN transistor with a built-in resistor is perfect for switching applications. Its high DC current gain of 70 and maximum collector-emitter voltage of 50V ensure optimal performance. With a compact rectangular package and gull wing terminals, this transistor is easy to integrate into your designs. Trust Nexperia's quality and reliability to bring value to your projects. Experience seamless operation and enhanced efficiency with the PDTD143XT,215.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good thermal conductivity and electrical insulation to ensure reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for various applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making it convenient for compact electronic projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast switching speeds and high efficiency.

Surface Mount: YES

Being surface mountable enhances ease of assembly and allows for automated production processes, making it suitable for mass production.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and soldering on circuit boards for increased efficiency during assembly.

Minimum DC Current Gain (hFE): 70

A high minimum DC current gain ensures consistent performance and stable amplification in various circuit configurations.

Maximum Collector-Emitter Voltage: 50 V

With a high collector-emitter voltage rating, this transistor can handle higher voltage levels, increasing its versatility.

Maximum Collector Current (IC): 0.5 A

The maximum collector current rating of 0.5 A allows for handling moderate current levels, suitable for a wide range of applications.

Nominal Transition Frequency (fT): 225 MHz

The high transition frequency enables fast signal switching and ensures high-frequency performance in RF and other applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTD143XT,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 2.13

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PDTD143XT,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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