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NSVBC143ZPDXV6T5G

Onsemi

NSVBC143ZPDXV6T5G by Onsemi

NSVBC143ZPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, featuring 2 elements with built-in resistor. With VCEsat of 0.25V, it operates in temperatures from -55 to 150 °C. Ideal for automotive applications due to AEC-Q101 standard compliance and max collector-emitter voltage of 50V.

Median Price

$0.108

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 113,400 parts In-Stock

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-

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$0.112

1k+ parts

$0.093

10k+ parts

$0.083

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$0.112

$0.093

$0.083

Verical

USA . 113,400 parts In-Stock

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$0.104

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$0.104

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Chip Stock

USA . 69,000 parts In-Stock

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Flip Electronics

USA . 8,100 parts In-Stock

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Vyrian

USA . 5,660 parts In-Stock

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Digiode

USA . 1,390 parts In-Stock

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AZTECH Wire

Italy . 1,143 parts In-Stock

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$13.170

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$13.170

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Component Stockers USA

USA . 639 parts In-Stock

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$99.990

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639

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Kepictronics

USA . 120,000 parts In-Stock

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Perfect Parts

USA . 17,781 parts In-Stock

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SupplyDigital Components

Austria . 8,238 parts In-Stock

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GreenTree Electronics

Israel . 7,938 parts In-Stock

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Kulean Microsystems

USA . 6,931 parts In-Stock

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TANS Electronics

Latvia . 6,294 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Problanco Electronics

Mexico . 2,121 parts In-Stock

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Corphita

USA . 1,957 parts In-Stock

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UHIMA Technologies

Türkiye . 472 parts In-Stock

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Corohmni

South Africa . 125 parts In-Stock

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Overview

Unlock the power of innovation with the NSVBC143ZPDXV6T5G by Onsemi. Crafted with precision and reliability, this small signal bipolar junction transistor offers unmatched performance in a compact package. Whether you're designing cutting-edge electronics or enhancing existing systems, this NPN and PNP transistor with built-in resistor elements delivers seamless functionality and exceptional efficiency. Trust in Onsemi's reputation for excellence and elevate your projects to new heights with the NSVBC143ZPDXV6T5G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN AND PNP

Offers flexibility in circuit design as both NPN and PNP transistors are available in the same package.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves board space, making the transistor more convenient to use.

Maximum VCEsat: 0.25 V

Low VCEsat minimizes power loss and improves efficiency in switching applications.

Terminal Form: FLAT

Flat terminals ensure easy and secure soldering during assembly, enhancing the reliability of the connection.

No. of Elements: 2

Having 2 elements in one package allows for more compact circuit layouts and saves PCB space.

Maximum Power Dissipation (Abs): 0.5 W

Ability to dissipate up to 0.5W of power ensures the transistor can handle high power applications without overheating.

Maximum Collector-Emitter Voltage: 50 V

With a high VCE rating, the transistor is suitable for use in a variety of voltage applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVBC143ZPDXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

NSVBC143ZPDXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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