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NSVBC143ZPDXV6T1G

Onsemi

NSVBC143ZPDXV6T1G by Onsemi

NSVBC143ZPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP types, 2 elements with built-in resistor. It has VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for automotive applications due to AEC-Q101 standard compliance and operating temperature range from -55 °C to 150°C.

Median Price

$0.081

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,840 parts In-Stock

1+ parts

$0.470

100+ parts

$0.180

1k+ parts

$0.102

10k+ parts

$0.079

2,840

$0.470

$0.180

$0.102

$0.079

Rochester

USA . 264,192 parts In-Stock

1+ parts

-

100+ parts

$0.072

1k+ parts

$0.060

10k+ parts

$0.053

264,192

-

$0.072

$0.060

$0.053

DigiKey

USA . 264,192 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.090

264,192

-

-

-

$0.090

Verical

USA . 264,192 parts In-Stock

1+ parts

-

100+ parts

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$0.067

264,192

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-

-

$0.067

Flip Electronics (Authorized)

USA . 76,000 parts In-Stock

1+ parts

-

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-

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76,000

-

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Distributors (In-Stock)

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Digiode

USA . 170 parts In-Stock

1+ parts

$0.056

100+ parts

-

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170

$0.056

-

-

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Vyrian

USA . 2,064 parts In-Stock

1+ parts

$0.059

100+ parts

-

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2,064

$0.059

-

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-

Flip Electronics

USA . 76,000 parts In-Stock

1+ parts

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76,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 921 parts In-Stock

1+ parts

$0.053

100+ parts

-

1k+ parts

-

10k+ parts

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921

$0.053

-

-

-

Corohmni

South Africa . 205 parts In-Stock

1+ parts

$0.059

100+ parts

-

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205

$0.059

-

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Continental Prestige Electronics

USA . 288,000 parts In-Stock

1+ parts

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100+ parts

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$0.116

10k+ parts

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288,000

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$0.116

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Kepictronics

USA . 120,000 parts In-Stock

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120,000

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iodParts Technologies Inc.

India . 108,000 parts In-Stock

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108,000

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Problanco Electronics

Mexico . 5,310 parts In-Stock

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5,310

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Kulean Microsystems

USA . 2,705 parts In-Stock

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2,705

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SupplyDigital Components

Austria . 2,244 parts In-Stock

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2,244

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UHIMA Technologies

Türkiye . 839 parts In-Stock

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839

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TANS Electronics

Latvia . 496 parts In-Stock

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496

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Overview

Discover the NSVBC143ZPDXV6T1G by Onsemi, a top-tier manufacturer known for quality and reliability. This small signal bipolar junction transistor offers NPN and PNP configurations with built-in resistors, ideal for a wide range of applications. From consumer electronics to automotive systems, this product provides exceptional value with low VCEsat and high DC current gain. Trust Onsemi for cutting-edge technology and superior performance in every package, ensuring your designs stand out in the market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and reliability in various operating conditions.

Polarity or Channel Type: NPN AND PNP

Offers flexibility in circuit design as both NPN and PNP types are included in the package, suitable for different applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Convenient for circuit layouts requiring separate transistors, with the added benefit of built-in resistors for ease of use and space-saving.

Surface Mount: YES

Enables easy and efficient mounting on PCBs, making it suitable for compact designs and automated assembly processes.

Maximum VCEsat: 0.25 V

Low VCEsat voltage helps in minimizing power loss and improving efficiency in applications requiring low saturation voltage.

Package Shape: RECTANGULAR

Facilitates easy handling and mounting of the transistor on a PCB, ensuring proper alignment and secure placement.

Minimum DC Current Gain (hFE): 80

High DC current gain ensures stable and consistent amplification performance in various circuit configurations.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications where higher voltage handling capability is required, providing versatility in circuit design.

Minimum Operating Temperature: -55 °C

Wide operating temperature range allows the transistor to function reliably in extreme temperature environments.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating for low power applications, ensuring reliable performance under specified conditions.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVBC143ZPDXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

NSVBC143ZPDXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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