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DMN61D9UDW-7

Diodes Incorporated

DMN61D9UDW-7 by Diodes Incorporated

DMN61D9UDW-7 by Diodes Inc. is a N-CHANNEL BJT with 60V DS Breakdown Voltage, 0.35A ID, and 3.5 ohm RDS(on). Ideal for SWITCHING applications in small outline packages, operating from -55 to 150 °C.

Median Price

$0.062

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 3,000 parts In-Stock

1+ parts

-

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$0.060

3,000

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-

$0.060

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

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10k+ parts

$0.065

3,000

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$0.065

Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.106

100+ parts

-

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300

$0.106

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NAC Semi

USA . 999 parts In-Stock

1+ parts

$0.596

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$0.596

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Vyrian

USA . 8,058 parts In-Stock

1+ parts

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8,058

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ComSIT Distribution GmbH

Germany . 1,046 parts In-Stock

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1,046

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NexGen Digital

USA . 3 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,765 parts In-Stock

1+ parts

$0.051

100+ parts

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2,765

$0.051

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Argo Parts USA

USA . 4,839 parts In-Stock

1+ parts

$0.106

100+ parts

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$0.103

4,839

$0.106

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$0.103

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.106

100+ parts

-

1k+ parts

$0.101

10k+ parts

$0.099

2,000

$0.106

-

$0.101

$0.099

Continental Prestige Electronics

USA . 625 parts In-Stock

1+ parts

$0.106

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$0.104

625

$0.106

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-

$0.104

Modulus Dynamics

Lithuania . 17,380 parts In-Stock

1+ parts

$0.402

100+ parts

$0.402

1k+ parts

$0.402

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-

17,380

$0.402

$0.402

$0.402

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Advanced Electronics

New Zealand . 109 parts In-Stock

1+ parts

$0.487

100+ parts

$0.443

1k+ parts

$0.399

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109

$0.487

$0.443

$0.399

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Corohmni

South Africa . 152 parts In-Stock

1+ parts

$0.797

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152

$0.797

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Aztec Data Supply Inc.

USA . 4,613 parts In-Stock

1+ parts

$1.840

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4,613

$1.840

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AZTECH Wire

Italy . 1,190 parts In-Stock

1+ parts

$21.750

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$21.750

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RC Electronics

USA . 96,690 parts In-Stock

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96,690

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Kepictronics

USA . 22,625 parts In-Stock

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Perfect Parts

USA . 13,440 parts In-Stock

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Lixinc

USA . 12,040 parts In-Stock

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Robosynatics

Brazil . 11,667 parts In-Stock

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Lucentia Tech

USA . 11,667 parts In-Stock

1+ parts

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100+ parts

$0.543

1k+ parts

$0.532

10k+ parts

$0.532

11,667

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$0.543

$0.532

$0.532

Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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XScomponents

USA . 5,000 parts In-Stock

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$0.100

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5,000

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$0.100

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Overview

Experience the next level of performance with the DMN61D9UDW-7 by Diodes Incorporated, a leading manufacturer in the industry. As part of the Small Signal Bipolar Junction Transistors (BJT) category, this N-CHANNEL transistor offers exceptional switching capabilities for a wide range of applications. With a high DS Breakdown Voltage and low power dissipation, this transistor provides reliable and efficient operation. Trust Diodes Incorporated to deliver quality products that exceed expectations and unlock new possibilities in your projects. Elevate your designs with the DMN61D9UDW-7 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors are known for their fast switching speeds and high input impedance.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Allows for versatile circuit design options and integrated diodes for protection.

Transistor Application: SWITCHING

Optimized for switching applications, providing efficient performance in on/off states.

Surface Mount: YES

Convenient for automated assembly processes and compact circuit designs.

Maximum Drain Current (ID): 0.35 A

Capable of handling up to 0.35A of current, suitable for various low-power applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, ideal for industrial and automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DMN61D9UDW-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.35 A

Maximum Drain-Source On Resistance:

3.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

2.5 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

MIL-STD-202

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN61D9UDW-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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