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MMBT4401-AU_R1_000A1

Panjit International

MMBT4401-AU_R1_000A1 by Panjit International

Panjit International's MMBT4401-AU_R1_000A1 is a NPN BJT transistor for switching applications. With VCEsat of 0.75V, hFE of 100, and IC of 0.6A, it operates in temperatures from -55 to 150 °C. This small outline package with Gull Wing terminals suits high-speed switching needs up to 250MHz.

Median Price

$0.018

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TTI

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Nova Conductors

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Netroflash

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AZTECH Wire

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Overview

Discover the power of Panjit International's MMBT4401-AU_R1_000A1, a cutting-edge Small Signal Bipolar Junction Transistor designed for high-performance switching applications. With its NPN polarity and single configuration, this transistor offers unparalleled reliability and efficiency. Whether you're in the automotive industry or telecommunications sector, this surface-mount transistor delivers exceptional value with a low VCEsat of 0.75V and a minimum DC Current Gain of 100. Trust Panjit International for quality components that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile in its usage.

Configuration: SINGLE

Simplifies circuit design and allows for easy integration into existing circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Enables easy and convenient mounting on PCBs, saving space and simplifying manufacturing processes.

Maximum VCEsat: 0.75 V

Low VCE saturation voltage promotes energy efficiency and reduces power dissipation in the transistor.

Package Shape: RECTANGULAR

Optimal shape for efficient PCB layout and space utilization.

Terminal Form: GULL WING

Facilitates reliable soldering and connection to the PCB.

No. of Terminals: 3

Simplifies the connection process and reduces the chances of wiring errors.

Maximum Power Dissipation (Abs): 0.225 W

Ensures efficient power handling capacity, making it suitable for various applications.

Package Style (Meter): SMALL OUTLINE

Compact package style suitable for small electronic devices or tight spaces.

Maximum Collector Current (IC): 0.6 A

Able to handle relatively high collector currents, making it suitable for medium-power applications.

Maximum Collector-Emitter Voltage: 40 V

Allows for operation in circuits with higher voltage requirements.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT4401-AU_R1_000A1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Panjit International

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

6.5 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.225 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

255 ns

Maximum Turn On Time (ton):

35 ns

Maximum VCEsat:

.75 V

Trade Compliance

MMBT4401-AU_R1_000A1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Panjit International

PANJIT is a public company founded in May 1986. We are a semi-conductor manufacturer, and have IATF-16949,ESD S20.20,ISO-9001,ISO-14001,ISO-45001 certifications etc.. PANJIT is vertically integrated with IDM design capability, own wafer foundries and state-of-art production lines. With insight observation and core technologies, PANJIT is able to continuously launch low profile products and accurate power rating devices which conforms to the customer needs. PANJIT commits to serve customers with the best service, thus we have established sales offices worldwide. We have sites in North America, Germany, Korea and China which allows us to provide better and prompt service.

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