Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395
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2SB1203T-E
Onsemi
Onsemi's 2SB1203T-E is a PNP BJT transistor with max. power dissipation of 20W, hFE of 200, and max. collector current of 5A. Ideal for switching applications due to its single configuration and high transition frequency of 130MHz. Package style: IN-LINE, terminal finish: TIN BISMUTH, and operating temp: 150 °C.
COLLECTOR
5 A
50 V
SINGLE
200
TO-251
R-PSIP-T3
e6
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
PNP
20 W
Other Transistors
NO
TIN BISMUTH
THROUGH-HOLE
SWITCHING
SILICON
130 MHz
BC857BW-HF
Comchip Technology
BC857BW-HF by Comchip Technology is a PNP BJT transistor for switching applications. With a VCEsat of 0.65V, hFE of 220, and IC of 0.1A, it operates at a max temperature of 150°C. Its small outline package with GULL WING terminals makes it suitable for compact electronic designs.
.1 A
4.5 pF
45 V
220
R-PDSO-G3
SMALL OUTLINE
NOT SPECIFIED
.15 W
YES
GULL WING
DUAL
100 MHz
.65 V
SMMJT350T3G
SMMJT350T3G by Onsemi is a PNP BJT transistor with 300V VCEO, 0.5A IC, and 2.75W power dissipation suitable for switching applications. It comes in a small outline package with Gull Wing terminals, operating b/w -55 °C to 150°C. Ideal for automotive electronics due to AEC-Q101 compliance.
.5 A
300 V
20
TO-261AA
R-PDSO-G4
4
-55 Cel
2.75 W
AEC-Q101
ZXPD4000DH-7
Diodes Incorporated
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Maximum Collector Current (IC): 2 A; Transistor Element Material: SILICON;
2 A
120 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
2000
S-PDSO-N8
e4
8
SQUARE
260
NPN
.9 W
NICKEL PALLADIUM GOLD
NO LEAD
30
AMPLIFIER
1.5 V
BC847QAPN,147
Nexperia
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: NO LEAD;
SEPARATE, 2 ELEMENTS
R-PDSO-N6
e3
2
6
NPN AND PNP
AEC-Q101; IEC-60134
TIN
BC857CQA,147
BC857CQA,147 by Nexperia is a PNP BJT transistor with hFE of 420. It has VCE of 45V and IC of 0.1A, suitable for switching applications. This SOT23-3 packaged transistor operates at a transition frequency of 100MHz, conforming to AEC-Q101 and IEC-60134 standards.
420
R-PDSO-N3
PBHV8515QA,147
Nexperia's PBHV8515QA,147 is a NPN BJT transistor with max. Vce of 150V and Ic of 0.5A. With hFE of 35 and fT of 75MHz, it's ideal for switching applications in automotive electronics due to AEC-Q101 compliance.
150 V
35
75 MHz
PDTA114EQA,147
Nexperia's PDTA114EQA,147 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 30, VCE of 50V, and IC of 0.1A. This small outline transistor has a transition frequency of 180MHz and meets AEC-Q101 and IEC-60134 standards.
BUILT IN BIAS RESISTANCE RATIO IS 1
SINGLE WITH BUILT-IN RESISTOR
180 MHz
PDTA123JQA,147
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;
BUILT IN BIAS RESISTANCE RATIO IS 21
100
PDTA143EQA,147
Nexperia's PDTA143EQA,147 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 30, VCE of 50V, and fT of 180MHz. This transistor has a plastic/epoxy body, is surface mountable, and has tin finish terminals.
PDTA143XQA,147
Nexperia's PDTA143XQA,147 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 50, VCE of 50V, and fT of 180MHz. Its small outline package makes it suitable for surface mount designs in automotive electronics meeting AEC-Q101 standards.
BUILT IN BIAS RESISTANCE RATIO IS 2.1
50
PDTA143ZQA,147
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: TIN;
BUILT IN BIAS RESISTANCE RATIO IS 10
PDTA144EQA,147
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;
80
PDTB113EU,135
NXP Semiconductors
NXP Semiconductors' PDTB113EU,135 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 33, VCE of 50V, and fT of 140MHz. This small outline transistor has Gull Wing terminals and meets AEC-Q101 and IEC-60134 standards.
33
140 MHz
PDTB113ZU,135
NXP Semiconductors' PDTB113ZU,135 is a PNP BJT with built-in resistor for switching applications. Features include 50V VCE, 0.5A IC, and 140MHz fT. This small outline transistor has Gull Wing terminals and meets AEC-Q101 and IEC-60134 standards.
70
PDTB123EU,135
The NXP Semiconductors PDTB123EU,135 is a PNP BJT with built-in resistor for switching applications. It has a hFE of 40, Vce of 50V, and fT of 140MHz. This small outline transistor features gull wing terminals in a rectangular package suitable for surface mount assembly.
40
PDTB123YU,135
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
BUILT IN BIAS RESISTANCE RATIO IS 4.55
PDTB143ET,215
NXP Semiconductors' PDTB143ET,215 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 60, VCE of 50V, and fT of 140MHz. This small outline transistor has Gull Wing terminals in a rectangular package.
BUILT IN BIAS RESISTOR RATIO IS 1
60
TO-236AB
PDTB143XQA,147
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;
BUILT IN BIAS RESISTANCE RATIO IS 2.13
150 MHz
PDTC114EQA,147
Nexperia's PDTC114EQA,147 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 30, VCE of 50V, and fT of 230MHz. This small outline transistor has tin finish, dual terminals, and can handle IC up to 0.1A.
230 MHz
PDTC114YQA,147
Nexperia's PDTC114YQA,147 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 100, VCE of 50V, and fT of 230MHz. It comes in a small outline package with tin finish and can withstand peak reflow temp of 260°C.
BUILT IN BIAS RESISTANCE RATIO IS 4.7
PDTC143XQA,147
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Collector Current (IC): .1 A; Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 2.1;
PDTC143ZQA,147
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;
PDTC144EQA,147
Nexperia's PDTC144EQA,147 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 80, VCE of 50V, and fT of 230MHz. This small outline transistor has tin finish, no lead terminals, and can handle up to 0.1A collector current.
PDTD114EQA,147
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 210 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;
210 MHz
PDTD114EU,135
NXP Semiconductors PDTD114EU,135 is a NPN BJT transistor with built-in resistor for switching applications. It features hFE of 70, VCE of 50V, and fT of 225MHz. This small outline package with gull wing terminals is ideal for surface mount designs in automotive and industrial electronics.
225 MHz
PDTD123EU,135
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 225 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 50 V;
ADTA114YUAQ-7
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTOR RATIO IS 4.7
68
.33 W
AEC-Q101; IATF 16949, MIL-STD-202
MATTE TIN
250 MHz
ADTA124ECAQ-7
The Diodes Inc. ADTA124ECAQ-7 is a PNP BJT with 3 terminals, hFE of 56, and IC of 0.1A. It has a max power dissipation of 0.31W and operates b/w -55 to 150°C. Ideal for small outline applications requiring a transistor with built-in resistor in automotive environments compliant with AEC-Q101 standards.
HIGH RELIABILITY
56
.31 W
ADTC143XUAQ-13
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTOR RATIO IS 2.13
RN2303,LF
Toshiba
Toshiba's RN2303,LF is a PNP BJT transistor with VCEsat of 0.3V and hFE of 70. Ideal for switching applications, it has a max IC of 0.1A and fT of 200MHz. Its GULL WING terminals make it suitable for surface mount designs in compact electronic devices.
6 pF
.1 W
200 MHz
.3 V
ADTA143ECAQ-13
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISITOR RATIO IS 1
ADTA143ECAQ-7
ADTC124EUAQ-7
ADTC143ECAQ-7
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
2SC3303-Y(T6L1,NQ)
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 5 A;
80 V
120
R-PSSO-G2
1 W
120 MHz
.4 V
HN2C01FU-GR(T5L,F)
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .15 A;
.15 A
3.5 pF
R-PDSO-G6
125 Cel
.2 W
80 MHz
.25 V
HN2C01FU-Y(TE85L,F
RN1313(TE85LF)
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Transistor Element Material: SILICON;
BIP General Purpose Small Signal
RN2404-(TE85LF)
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON;
ASS8050-H-HF
Comchip Technology's ASS8050-H-HF is a NPN BJT with VCEsat of 0.5V, hFE of 200, and IC of 1.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and high transition frequency of 100MHz.
1.5 A
25 V
.3 W
Tin (Sn)
.5 V
NSVBC123JDXV6T5G
NSVBC123JDXV6T5G by Onsemi is a NPN BJT transistor with 0.25 V max VCEsat, 80 min hFE, and 50 V max VCE. It is used for switching applications in automotive electronics due to its AEC-Q101 reference standard compliance and 0.1 A max IC.
BUILT-IN BIAS RESISTOR
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-F6
.5 W
FLAT
AS9013-H-HF
Comchip Technology's AS9013-H-HF is a NPN BJT transistor with VCEsat of 0.6V, hFE of 200, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 certification and 150MHz fT. Package: PLASTIC/EPOXY, GULL WING terminals, suitable for surface mount assembly.
.6 V
AS9013-L-HF
Comchip Technology's AS9013-L-HF is a NPN BJT transistor with VCEsat of 0.6V, hFE of 120, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 certification and high transition frequency of 150MHz.
AS9013-J-HF
Comchip Technology's AS9013-J-HF is a NPN BJT with VCEsat of 0.6V, hFE of 300, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 certification and 150MHz fT.
300
ASS8550-H-HF
Comchip Technology's ASS8550-H-HF is a PNP BJT transistor with VCEsat of 0.5V, hFE of 200, and IC of 1.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and high transition frequency of 100MHz.
MMDT2907VQ-7
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .6 A;
.6 A
8 pF
60 V
Matte Tin (Sn)
100 ns
45 ns
1.6 V
ABC857BW-HF
ABC857BW-HF by Comchip Technology is a PNP BJT transistor with VCEsat of 0.65V, hFE of 220, and IC of 0.1A. Ideal for amplifier applications, it has a max operating temperature of 150°C and collector-emitter voltage of 45V. Suitable for surface mount with gull wing terminals in a small outline package style.
LOW NOISE
5 pF
-65 Cel
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