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PDTA143XQA,147

Nexperia

PDTA143XQA,147 by Nexperia

Nexperia's PDTA143XQA,147 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 50, VCE of 50V, and fT of 180MHz. Its small outline package makes it suitable for surface mount designs in automotive electronics meeting AEC-Q101 standards.

Median Price

$0.032

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 35,000 parts In-Stock

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$0.032

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$0.030

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$0.027

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$0.032

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Avnet

USA . 35,000 parts In-Stock

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DigiKey Marketplace

USA . 40,000 parts In-Stock

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Vyrian

USA . 4,036 parts In-Stock

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AZTECH Wire

Italy . 4,483 parts In-Stock

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$21.900

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Continental Prestige Electronics

USA . 40,000 parts In-Stock

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$0.035

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$0.035

QUARKTWIN TECHNOLOGY LTD

USA . 3,713 parts In-Stock

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Supply Digital

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Overview

Unlock the power of precision and reliability with Nexperia's PDTA143XQA,147 Small Signal Bipolar Junction Transistor. Designed for switching applications, this PNP transistor offers a seamless performance with its built-in resistor configuration. Perfectly crafted with high-quality silicon material, this transistor guarantees a minimum DC current gain of 50 and a maximum collector-emitter voltage of 50V. Say goodbye to inefficiency and hello to seamless operation with Nexperia's cutting-edge technology. Ideal for a variety of electronic projects, this transistor is your key to unlocking endless possibilities in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures sturdy construction and helps in protecting the internal components from external damage.

Polarity or Channel Type: PNP

PNP type transistors are commonly used for high-side switching applications which makes it suitable for various switching circuits.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies the circuit design and saves space by eliminating the need for external components.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low saturation voltages.

Surface Mount: YES

Surface mountable design allows for easy and efficient PCB assembly, saving time and effort during production.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures reliable and consistent amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 50 V

With a maximum voltage rating of 50V, this transistor can handle moderate voltage levels without breakdown.

Transistor Element Material: SILICON

Silicon material offers high performance, reliability, and efficiency in a wide range of operating conditions.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels in various switching applications.

Terminal Finish: TIN

Tin terminal finish provides good solderability and ensures stable electrical connections for reliable performance.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency of 180MHz enables fast response times and high-frequency operation, suitable for switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTA143XQA,147 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 2.1

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-N3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PDTA143XQA,147 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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