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PBHV8515QA,147

Nexperia

PBHV8515QA,147 by Nexperia

Nexperia's PBHV8515QA,147 is a NPN BJT transistor with max. Vce of 150V and Ic of 0.5A. With hFE of 35 and fT of 75MHz, it's ideal for switching applications in automotive electronics due to AEC-Q101 compliance.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,000 parts In-Stock

1+ parts

$0.119

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$0.112

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$0.101

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$0.119

$0.112

$0.101

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DigiKey Marketplace

USA . 5,000 parts In-Stock

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Vyrian

USA . 2,615 parts In-Stock

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2,615

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Distributors (Availability)

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AZTECH Wire

Italy . 4,894 parts In-Stock

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$9.880

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$9.880

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Continental Prestige Electronics

USA . 5,000 parts In-Stock

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$0.129

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Supply Digital

USA . 2,401 parts In-Stock

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Overview

Enhance your electronic designs with the PBHV8515QA,147 by Nexperia, a top-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Nexperia, a trusted name in the industry, this NPN transistor is ideal for switching applications. With a maximum collector-emitter voltage of 150V and a minimum DC current gain of 35, this transistor delivers superior functionality. Its small outline package and surface mount capability make it versatile for various design requirements. Trust Nexperia to provide you with cutting-edge technology that exceeds expectations. Choose the PBHV8515QA,147 for unmatched value and performance in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for easy handling and installation.

Polarity or Channel Type: NPN

Commonly used polarity for a wide range of applications.

Configuration: SINGLE

Simplified design for straightforward circuit integration.

Transistor Application: SWITCHING

Specifically designed for efficient switching applications.

Surface Mount: YES

Efficient mounting option for compact circuit design.

Package Shape: RECTANGULAR

Space-saving shape for efficient PCB layout.

No. of Terminals: 3

Simple connectivity for basic circuit requirements.

Minimum DC Current Gain (hFE): 35

Consistent and reliable amplification of input signals.

Maximum Collector-Emitter Voltage: 150 V

Suitable for medium voltage applications.

Transistor Element Material: SILICON

Highly efficient material for transistor performance.

Maximum Collector Current (IC): 0.5 A

Adequate current handling capacity for various applications.

Terminal Finish: TIN

Corrosion-resistant finish for long-term reliability.

Terminal Position: DUAL

Versatile terminal layout for different circuit configurations.

Case Connection: COLLECTOR

Efficient connection for collector terminal.

Maximum Time At Peak Reflow Temperature (s): 30

Quick and precise reflow process for manufacturing efficiency.

Peak Reflow Temperature °C: 260

High temperature threshold for reliable soldering process.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards for quality assurance.

Nominal Transition Frequency (fT): 75 MHz

High-frequency capability for fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PBHV8515QA,147 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-N3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PBHV8515QA,147 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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