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PBHV9050T,215

NXP Semiconductors

PBHV9050T,215 by NXP Semiconductors

NXP Semiconductors' PBHV9050T,215 is a PNP BJT transistor for switching applications. With 500V VCEO and 150°C max temp, it has hFE of 80 and fT of 50MHz. This Gull Wing package with tin finish is ideal for small outline designs requiring high collector current.

Median Price

$0.133

Lifecycle Status

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14

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 15,880 parts In-Stock

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$0.174

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$0.121

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$0.174

$0.121

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Newark

USA . 4 parts In-Stock

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$1.600

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$0.747

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4

$1.600

$0.747

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Verical

USA . 15,880 parts In-Stock

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$0.121

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15,880

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$0.121

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Arrow

USA . 9,000 parts In-Stock

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$0.114

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$0.114

RS (Exports)

UK . 4,300 parts In-Stock

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$0.133

4,300

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$0.133

Distributors (In-Stock)

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Digiode

USA . 2,624 parts In-Stock

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$0.390

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2,624

$0.390

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Maritex

Poland . 8 parts In-Stock

1+ parts

$1.390

100+ parts

$0.328

1k+ parts

$0.274

10k+ parts

$0.197

8

$1.390

$0.328

$0.274

$0.197

Chip Stock

USA . 84,000 parts In-Stock

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Sensible Micro Corp

USA . 78,072 parts In-Stock

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NAC Semi

USA . 57,000 parts In-Stock

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$0.168

57,000

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$0.168

Bristol Electronics

USA . 15,518 parts In-Stock

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Vyrian

USA . 6,309 parts In-Stock

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Anansix

USA . 1,990 parts In-Stock

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Nova Conductors

Japan . 82 parts In-Stock

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Ampacity Inc.

Singapore . 16,561 parts In-Stock

1+ parts

$0.078

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16,561

$0.078

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AZTECH Wire

Italy . 3,900 parts In-Stock

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$0.180

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3,900

$0.180

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Corphita

USA . 1,476 parts In-Stock

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$0.369

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1,476

$0.369

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Corohmni

South Africa . 192 parts In-Stock

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$0.500

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192

$0.500

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$0.730

100+ parts

$0.664

1k+ parts

$0.599

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2,500

$0.730

$0.664

$0.599

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Modulus Dynamics

Lithuania . 22,271 parts In-Stock

1+ parts

$1.858

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$1.858

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$1.858

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22,271

$1.858

$1.858

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Perfect Parts

USA . 464,537 parts In-Stock

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Eastek

USA . 192,000 parts In-Stock

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$0.150

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Continental Prestige Electronics

USA . 39,293 parts In-Stock

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$0.228

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$0.128

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Kepictronics

USA . 27,819 parts In-Stock

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GreenTree Electronics

Israel . 9,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,015 parts In-Stock

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Argo Parts USA

USA . 5,329 parts In-Stock

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iodParts Technologies Inc.

India . 3,725 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Supply Digital

USA . 2,106 parts In-Stock

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UNI Independent Distributors

Spain . 2,071 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Overview

Experience the next level of performance with the PBHV9050T,215 by NXP Semiconductors. Crafted with precision and expertise, this PNP Small Signal Bipolar Junction Transistor offers unparalleled switching capabilities in a compact and durable package. Ideal for a wide range of applications, this transistor provides reliable and efficient operation, ensuring optimal performance in any project. Upgrade your electronic designs with the quality and reliability that only NXP Semiconductors can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good overall protection and durability for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications and can handle higher power levels compared to NPN transistors.

Configuration: SINGLE

Single configuration makes it easier to integrate into circuits and simplifies the design process.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Package Shape: RECTANGULAR

Rectangular shape provides a compact form factor, ideal for space-constrained designs.

Terminal Form: GULL WING

Gull wing terminals offer improved solderability and mechanical strength, enhancing the overall reliability of the connection.

Maximum Power Dissipation: 0.3 W

High power dissipation rating allows the transistor to handle higher power levels without overheating, ensuring stable performance.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 80

High minimum DC current gain ensures consistent and predictable amplification characteristics, important for signal processing applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance ensures the transistor can operate reliably in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 500 V

High voltage rating allows the transistor to handle large voltage differences, making it suitable for high-power applications.

Transistor Element Material: SILICON

Silicon material provides good electrical properties and reliability for the transistor, ensuring consistent performance over time.

Maximum Collector Current (IC): 0.15 A

High collector current rating allows the transistor to handle larger current flows, making it suitable for power switching applications.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, ensuring a reliable electrical connection.

Terminal Position: DUAL

Dual terminal position allows for flexibility in PCB layout and connection options, making it easier to integrate into circuits.

Maximum Time At Peak Reflow Temperature: 30s

Short reflow time ensures quick and efficient assembly during manufacturing, reducing production time and costs.

Peak Reflow Temperature: 260 C

High peak reflow temperature tolerance ensures the transistor can withstand the heat of the soldering process without damage.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality and reliability, making it a trusted choice for various applications.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency allows for fast signal switching and amplification, suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PBHV9050T,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

500 V

Configuration:

Minimum DC Current Gain (hFE):

80

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PBHV9050T,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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