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PBHV9115T,215

NXP Semiconductors

PBHV9115T,215 by NXP Semiconductors

PBHV9115T,215 by NXP Semiconductors is a PNP BJT transistor with 150V VCEO and 1A IC. It has a hFE of 100, fT of 115MHz, and can handle 0.3W power dissipation. Ideal for switching applications in small outline packages with Gull Wing terminals.

Median Price

$0.115

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Future Electronics

Canada . 102 parts In-Stock

1+ parts

$0.945

100+ parts

$0.780

1k+ parts

$0.725

10k+ parts

$0.665

102

$0.945

$0.780

$0.725

$0.665

Arrow

USA . 9,000 parts In-Stock

1+ parts

-

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$0.087

9,000

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$0.087

Verical

USA . 9,000 parts In-Stock

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$0.087

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9,000

-

$0.087

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Chip1Stop

Japan . 9,000 parts In-Stock

1+ parts

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$0.111

9,000

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$0.111

Avnet

USA . 1,200 parts In-Stock

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$0.291

1,200

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$0.291

Farnell

UK . 242 parts In-Stock

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$0.194

1k+ parts

$0.132

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$0.129

242

-

$0.194

$0.132

$0.129

Rochester

USA . 93 parts In-Stock

1+ parts

-

100+ parts

$0.115

1k+ parts

$0.096

10k+ parts

$0.085

93

-

$0.115

$0.096

$0.085

Distributors (In-Stock)

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Digiode

USA . 564 parts In-Stock

1+ parts

$0.090

100+ parts

-

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564

$0.090

-

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IBS Electronics

USA . 102 parts In-Stock

1+ parts

$1.325

100+ parts

$1.094

1k+ parts

$1.017

10k+ parts

$0.666

102

$1.325

$1.094

$1.017

$0.666

NAC Semi

USA . 222,000 parts In-Stock

1+ parts

-

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$0.165

222,000

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$0.165

Chip Stock

USA . 83,000 parts In-Stock

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Vyrian

USA . 5,845 parts In-Stock

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ComSIT Distribution GmbH

Germany . 5,389 parts In-Stock

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5,389

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Anansix

USA . 71 parts In-Stock

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71

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Ampacity Inc.

Singapore . 9,082 parts In-Stock

1+ parts

$0.074

100+ parts

-

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9,082

$0.074

-

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Corphita

USA . 2,131 parts In-Stock

1+ parts

$0.086

100+ parts

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2,131

$0.086

-

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AZTECH Wire

Italy . 13,772 parts In-Stock

1+ parts

$0.180

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13,772

$0.180

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Continental Prestige Electronics

USA . 2,397 parts In-Stock

1+ parts

$0.335

100+ parts

$0.185

1k+ parts

$0.105

10k+ parts

-

2,397

$0.335

$0.185

$0.105

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$1.115

100+ parts

$1.015

1k+ parts

$0.914

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100

$1.115

$1.015

$0.914

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Modulus Dynamics

Lithuania . 20,612 parts In-Stock

1+ parts

$1.385

100+ parts

$1.385

1k+ parts

$1.385

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20,612

$1.385

$1.385

$1.385

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Corohmni

South Africa . 186 parts In-Stock

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$1.814

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Perfect Parts

USA . 28,465 parts In-Stock

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GreenTree Electronics

Israel . 24,000 parts In-Stock

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Eastek

USA . 12,000 parts In-Stock

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Kepictronics

USA . 5,320 parts In-Stock

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Argo Parts USA

USA . 4,607 parts In-Stock

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UNI Independent Distributors

Spain . 3,938 parts In-Stock

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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Supply Digital

USA . 2,199 parts In-Stock

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Aranea Global

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Overview

Upgrade your electronic projects with the PBHV9115T,215 Small Signal Bipolar Junction Transistor by NXP Semiconductors. This PNP transistor offers reliable switching capabilities in a compact package, making it ideal for a variety of applications. With a minimum DC current gain of 100 and a maximum collector-emitter voltage of 150V, this transistor provides exceptional performance and durability. Trust NXP Semiconductors' reputation for quality and innovation to take your designs to the next level. Elevate your projects with the PBHV9115T,215 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that ensures a long lifespan for the transistor.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance.

Surface Mount: YES

Easy to mount on PCBs, saving space and simplifying the assembly process.

Maximum Power Dissipation (Abs): 0.3 W

Capable of handling moderate power dissipation, suitable for various applications.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures reliable amplification and signal switching.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments, making it versatile for different conditions.

Maximum Collector-Emitter Voltage: 150 V

Can handle high voltages, suitable for a wide range of voltage applications.

Maximum Collector Current (IC): 1 A

Capable of handling high current loads, making it suitable for various circuit designs.

Nominal Transition Frequency (fT): 115 MHz

High transition frequency enables fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PBHV9115T,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PBHV9115T,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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