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PBHV8215Z,115

NXP Semiconductors

PBHV8215Z,115 by NXP Semiconductors

PBHV8215Z,115 by NXP Semiconductors is a NPN BJT transistor with 150V VCEO and 2A IC. It has a min hFE of 55 and can handle up to 1.45W power dissipation. Ideal for switching applications, this SOT-89 transistor operates at temperatures up to 150°C, making it suitable for various electronic designs.

Median Price

$0.177

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Farnell

UK . 855 parts In-Stock

1+ parts

$0.477

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$0.249

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$0.195

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855

$0.477

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$0.195

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Elektronika Sales Private Limited

India . 177,000 parts In-Stock

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Arrow

USA . 144,000 parts In-Stock

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$0.177

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$0.143

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$0.177

$0.143

TTI

USA . 49,000 parts In-Stock

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$0.210

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$0.198

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$0.210

$0.198

Verical

USA . 43,000 parts In-Stock

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$0.143

43,000

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$0.143

Future Electronics

Canada . 20,000 parts In-Stock

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$0.152

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$0.148

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$0.148

EBV Elektronik

Germany . 8,000 parts In-Stock

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Nova Conductors

Japan . 20 parts In-Stock

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$0.214

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20

$0.214

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Digiode

USA . 563 parts In-Stock

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$0.453

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563

$0.453

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Chip Stock

USA . 55,000 parts In-Stock

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NAC Semi

USA . 14,000 parts In-Stock

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$0.262

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Vyrian

USA . 6,779 parts In-Stock

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Anansix

USA . 2,895 parts In-Stock

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Speed Components Ltd

Israel . 30 parts In-Stock

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30

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ComSIT Distribution GmbH

Germany . 25 parts In-Stock

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ComSIT USA

USA . 25 parts In-Stock

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Distributors (Availability)

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Argo Parts USA

USA . 1,715 parts In-Stock

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$0.214

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$0.207

1,715

$0.214

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$0.207

Netroflash

USA . 100 parts In-Stock

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$0.214

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$0.203

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$0.199

100

$0.214

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$0.199

Advanced Electronics

New Zealand . 72 parts In-Stock

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$0.218

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$0.218

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$0.218

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72

$0.218

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$0.218

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Ampacity Inc.

Singapore . 41,784 parts In-Stock

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$0.265

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Corphita

USA . 1,311 parts In-Stock

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$0.429

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AZTECH Wire

Italy . 9,343 parts In-Stock

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$0.450

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Component Stockers USA

USA . 117,511 parts In-Stock

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$0.510

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$0.310

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$0.180

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$0.140

117,511

$0.510

$0.310

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$0.140

Corohmni

South Africa . 366 parts In-Stock

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$1.085

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366

$1.085

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Aztec Data Supply Inc.

USA . 23,108 parts In-Stock

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Perfect Parts

USA . 178,192 parts In-Stock

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Infinite Electronics LLP (Excess)

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Eastek

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Kepictronics

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UNI Independent Distributors

Spain . 3,653 parts In-Stock

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iodParts Technologies Inc.

India . 2,614 parts In-Stock

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Lixinc

USA . 2,377 parts In-Stock

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Authorized Procurement Solutions

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Supply Digital

USA . 1,134 parts In-Stock

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Continental Prestige Electronics

USA . 678 parts In-Stock

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$0.306

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678

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Overview

Looking for a reliable solution for your switching applications? Look no further than the PBHV8215Z,115 by NXP Semiconductors. With a reputation for high-quality products, NXP offers a Small Signal Bipolar Junction Transistor that delivers exceptional performance and reliability. Whether you need it for automotive, industrial, or consumer electronics, this NPN transistor is the perfect choice. With a maximum collector-emitter voltage of 150V and a maximum collector current of 2A, this transistor offers unmatched value and efficiency. Upgrade your projects with the PBHV8215Z,115 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and electrical insulation, making the transistor suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and reliability.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures easy integration into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast response times and efficient operation.

Surface Mount: YES

The surface mount feature enables easy and secure installation on PCBs, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of board space while providing stable mounting and alignment.

Terminal Form: GULL WING

The gull wing terminal form ensures reliable solder connections for enhanced durability and performance.

No. of Terminals: 4

With a sufficient number of terminals, this transistor offers versatility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 1.45 W

This high power dissipation capability allows the transistor to handle moderate to high-power applications efficiently.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and improves thermal performance for reliable operation.

Minimum DC Current Gain (hFE): 55

With a high minimum DC current gain, this transistor delivers consistent amplification in various circuit designs.

Maximum Operating Temperature: 150 °C

The high operating temperature range ensures reliable performance in harsh environmental conditions.

Maximum Collector-Emitter Voltage: 150 V

The high collector-emitter voltage rating allows the transistor to handle high voltage applications with ease.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and excellent thermal stability for dependable operation.

Maximum Collector Current (IC): 2 A

With a high collector current rating, this transistor can handle moderate to high-current loads in circuits.

Terminal Finish: TIN

The tin terminal finish provides excellent solderability and corrosion resistance for long-term reliability.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit layout and connection options for customized designs.

Case Connection: COLLECTOR

The case connection to the collector provides efficient heat dissipation, ensuring optimal performance under load.

Maximum Time At Peak Reflow Temperature (s): 30

The specified reflow time ensures proper soldering and reliability during assembly processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows for lead-free soldering and compatibility with various manufacturing standards.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high reliability and quality for automotive and industrial applications.

Nominal Transition Frequency (fT): 33 MHz

The high nominal transition frequency enables fast switching speeds and high-frequency operation for optimal performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PBHV8215Z,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

55

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PBHV8215Z,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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