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PBHV8540Z,115

NXP Semiconductors

PBHV8540Z,115 by NXP Semiconductors

NXP Semiconductors' PBHV8540Z,115 is a NPN BJT transistor with 400V VCEO and 0.5A IC for switching applications. It has a min hFE of 80, operates up to 150°C, and features GULL WING terminals in a small outline package. Ideal for high-power switching circuits requiring fast response times.

Median Price

$0.189

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

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Element14

Singapore . 99 parts In-Stock

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$1.610

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$0.648

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$0.622

10k+ parts

$0.609

99

$1.610

$0.648

$0.622

$0.609

Rochester

USA . 52,000 parts In-Stock

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-

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$0.189

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$0.157

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$0.140

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$0.189

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Verical

USA . 50,000 parts In-Stock

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$0.175

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Future Electronics

Canada . 17,000 parts In-Stock

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$0.158

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$0.150

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$0.150

Arrow

USA . 5,000 parts In-Stock

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$0.154

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$0.149

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$0.149

EBV Elektronik

Germany . 3,000 parts In-Stock

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Chip1Stop

Japan . 1,497 parts In-Stock

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$0.329

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$0.176

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1,497

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$0.329

$0.176

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Farnell

UK . 624 parts In-Stock

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$0.344

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$0.197

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624

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$0.197

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Distributors (In-Stock)

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Digiode

USA . 3,918 parts In-Stock

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$0.147

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$0.147

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Nova Conductors

Japan . 500 parts In-Stock

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$0.207

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$0.207

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Chip Stock

USA . 159,000 parts In-Stock

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NAC Semi

USA . 88,000 parts In-Stock

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$0.273

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IBS Electronics

USA . 27,000 parts In-Stock

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$0.208

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$0.198

27,000

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$0.198

Vyrian

USA . 6,045 parts In-Stock

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Anansix

USA . 2,119 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 597 parts In-Stock

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Semicontronic

India . 21,089 parts In-Stock

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$0.132

100+ parts

$0.129

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$0.128

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21,089

$0.132

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$0.128

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Corphita

USA . 3,095 parts In-Stock

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$0.140

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$0.140

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Aranea Global

USA . 1,000 parts In-Stock

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$0.203

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$0.195

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$0.203

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$0.195

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Argo Parts USA

USA . 1,293 parts In-Stock

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$0.207

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$0.201

1,293

$0.207

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AZTECH Wire

Italy . 11,365 parts In-Stock

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$0.340

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Continental Prestige Electronics

USA . 3,383 parts In-Stock

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$0.561

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$0.279

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$0.561

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Aztec Data Supply Inc.

USA . 18,902 parts In-Stock

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$0.690

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$0.690

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Corohmni

South Africa . 483 parts In-Stock

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$1.386

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Perfect Parts

USA . 220,640 parts In-Stock

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GreenTree Electronics

Israel . 205,000 parts In-Stock

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Eastek

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Futuretech Components

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Lixinc

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Supply Digital

USA . 2,827 parts In-Stock

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Authorized Procurement Solutions

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UNI Independent Distributors

Spain . 1,932 parts In-Stock

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Glotronic Ltd.

UK . 1,600 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Overview

Upgrade your electronic devices with the PBHV8540Z,115 by NXP Semiconductors. As a leading manufacturer in the industry, NXP guarantees top-notch quality and reliability in their products. This Small Signal Bipolar Junction Transistor is ideal for switching applications, offering high performance and efficiency. With a maximum power dissipation of 1.4W and a collector-emitter voltage of 400V, this NPN transistor delivers exceptional functionality. Trust NXP Semiconductors to provide you with cutting-edge technology that enhances the performance of your electronics. Elevate your designs with the PBHV8540Z,115 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for its durability and resistance to heat and moisture, making the transistor suitable for various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications due to their ability to amplify current and control electronic signals effectively.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can rapidly switch between on and off states, making it ideal for circuit designs requiring quick responses.

Maximum Power Dissipation (Abs): 1.4 W

With a high power dissipation rating, this transistor can handle moderate power levels without overheating or damaging the device.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the transistor to function efficiently in various environments without the risk of overheating.

Maximum Collector-Emitter Voltage: 400 V

The high collector-emitter voltage rating makes this transistor suitable for applications requiring high voltage switching operations.

Nominal Transition Frequency (fT): 30 MHz

With a high transition frequency, this transistor can amplify and switch signals at higher frequencies, making it suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PBHV8540Z,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PBHV8540Z,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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