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2SB1203T-E

Onsemi

2SB1203T-E by Onsemi

Onsemi's 2SB1203T-E is a PNP BJT transistor with max. power dissipation of 20W, hFE of 200, and max. collector current of 5A. Ideal for switching applications due to its single configuration and high transition frequency of 130MHz. Package style: IN-LINE, terminal finish: TIN BISMUTH, and operating temp: 150 °C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

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Vyrian

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Digiode

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Native Components

USA . 819 parts In-Stock

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Andel Nordic

Denmark . 51 parts In-Stock

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$1.140

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$0.796

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AZTECH Wire

Italy . 854 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

Mexico . 3,549 parts In-Stock

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Kulean Microsystems

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Corphita

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Northwest PG Solutions

USA . 1,668 parts In-Stock

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Corohmni

South Africa . 225 parts In-Stock

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UHIMA Technologies

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Overview

Experience superior performance and reliability with the 2SB1203T-E Small Signal Bipolar Junction Transistor by Onsemi. Known for their high-quality components, Onsemi delivers cutting-edge technology in a compact PNP transistor perfect for switching applications. With a maximum power dissipation of 20W and a collector current of 5A, this transistor offers unmatched efficiency and durability. Trust Onsemi to provide the best-in-class solutions for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical strength and thermal conductivity, making the transistor reliable in various operating conditions.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, such as complementary symmetry circuits.

Configuration: SINGLE

Simplified circuit design and easier to use in applications where only one transistor is needed.

Transistor Application: SWITCHING

Designed for efficient switching applications due to its high transition frequency and low saturation voltage.

Package Shape: RECTANGULAR

Easy to mount on PCBs and ensures good thermal performance.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and connection to circuits, especially for hobbyists and prototyping.

Maximum Power Dissipation (Abs): 20 W

Can handle high power dissipation, making it suitable for applications where heat dissipation is a concern.

Package Style (Meter): IN-LINE

Convenient packaging style for easy placement on the PCB and routing of traces.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures stable amplification and switching performance.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to medium voltage applications where higher voltage ratings are not needed.

Transistor Element Material: SILICON

Silicon transistors offer higher performance and reliability compared to other materials.

Maximum Collector Current (IC): 5 A

Can handle high collector currents, making it suitable for switching high-power loads.

Terminal Finish: TIN BISMUTH

Provides good solderability and resistance to oxidation, ensuring reliable connections.

Terminal Position: SINGLE

Simplified pin configuration for easy integration into circuits.

Case Connection: COLLECTOR

Easy to connect the collector terminal in the circuit for efficient current flow.

Nominal Transition Frequency (fT): 130 MHz

High transition frequency allows for fast switching speeds and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1203T-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN BISMUTH

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB1203T-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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