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AS9013-J-HF

Comchip Technology

AS9013-J-HF by Comchip Technology

Comchip Technology's AS9013-J-HF is a NPN BJT with VCEsat of 0.6V, hFE of 300, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 certification and 150MHz fT.

Median Price

$0.071

Lifecycle Status

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1k+

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Nova Conductors

Japan . 25 parts In-Stock

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$0.071

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25

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Vyrian

USA . 2,676 parts In-Stock

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2,676

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Bastille Electronics

Australia . 200 parts In-Stock

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$0.071

100+ parts

$0.067

1k+ parts

$0.064

10k+ parts

$0.063

200

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$0.067

$0.064

$0.063

Continental Prestige Electronics

USA . 3,123 parts In-Stock

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$0.071

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$0.070

3,123

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$0.070

Argo Parts USA

USA . 1,757 parts In-Stock

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$0.071

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$0.069

1,757

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AZTECH Wire

Italy . 428 parts In-Stock

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$9.176

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428

$9.176

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Overview

Elevate your electronic projects with the AS9013-J-HF Small Signal Bipolar Junction Transistor by Comchip Technology. Designed for reliability and performance, this NPN transistor offers a maximum VCEsat of just 0.6V and a minimum DC current gain of 300. Ideal for a wide range of applications, this transistor is perfect for amplification in audio circuits, signal processing, and motor control systems. Experience the superior quality and value that Comchip Technology brings to the table with the AS9013-J-HF.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal and electrical insulation, ensuring reliable performance and longevity.

Polarity or Channel Type: NPN

Suitable for applications where positive voltage is required at the collector for amplification.

Configuration: SINGLE

Simplifies circuit design and ensures ease of use.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, saving space and simplifying assembly processes.

Maximum VCEsat: 0.6 V

Low saturation voltage leads to lower power dissipation and improved efficiency.

Package Shape: RECTANGULAR

Provides a standardized form factor for easy integration into various electronic designs.

Terminal Form: GULL WING

Facilitates easy soldering and ensures secure mechanical mounting.

No. of Terminals: 3

Simplifies PCB layout and reduces complexity in circuit connections.

Maximum Power Dissipation (Abs): 0.3 W

Capable of handling moderate power levels without overheating, ensuring reliability.

Package Style (Meter): SMALL OUTLINE

Compact form factor saves space on the PCB and enables high-density circuit designs.

Minimum DC Current Gain (hFE): 300

Provides consistent and reliable amplification in various circuit applications.

Maximum Operating Temperature: 150 °C

Can operate in a wide range of temperature environments, suitable for various applications.

Maximum Collector-Emitter Voltage: 25 V

Sufficient voltage handling capability for many low voltage applications.

Transistor Element Material: SILICON

Silicon material offers good performance characteristics and reliability in semiconductor devices.

Maximum Collector Current (IC): 0.5 A

Suitable for low to moderate current amplification applications.

Terminal Position: DUAL

Allows for flexible mounting and connection options in various circuit layouts.

Reference Standard: AEC-Q101

Complies with automotive industry standards for quality and reliability, suitable for automotive applications.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for fast switching and amplification in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) AS9013-J-HF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Comchip Technology

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.3 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

AS9013-J-HF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

Comchip Technology

Established in 2000, Comchip strives to become the leading global semiconductor solution provider, delivering solutions and support with cost and quality advantages. Based in Taiwan, Comchip is constantly expanding in key locations around the world to provide direct, superior customer service, with sales offices located in China, Silicon Valley and New York. With innovative research and patented manufacturing capabilities, Comchip offers products including bridge rectifiers, fast efficient rectifiers, switching diodes, Zener diodes, Schottky diodes, TVS and ESD surge protectors. Recent expansion of product offering also includes power semiconductor devices including transistor and MOSFET solutions. Comchip products cover a vast array of applications in the electronics industry including lighting, automotive, industrial computers, TFT-LCD panels, network/telecom, medical, and consumer electronics. To ensure superior quality and reliability, Comchip’s in-house labs and production facilities are aligned with current automotive industry requirements in accordance with industry standards including AEC-Q101, TS16949, ISO9001, and ISO14001.

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