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AS9013-H-HF

Comchip Technology

AS9013-H-HF by Comchip Technology

Comchip Technology's AS9013-H-HF is a NPN BJT transistor with VCEsat of 0.6V, hFE of 200, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 certification and 150MHz fT. Package: PLASTIC/EPOXY, GULL WING terminals, suitable for surface mount assembly.

Median Price

$0.071

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Nova Conductors

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Overview

Discover the AS9013-H-HF by Comchip Technology, a high-quality Small Signal Bipolar Junction Transistor (BJT) designed to meet your electronic needs. With Comchip's reputation for excellence in manufacturing, this NPN transistor boasts a single configuration and gull wing terminals for easy installation. Ideal for a variety of applications, this transistor offers a low VCE saturation voltage of 0.6V and a minimum DC current gain of 200, providing exceptional performance and reliability. Upgrade your projects with the AS9013-H-HF and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are versatile in a wide range of applications.

Configuration: SINGLE

Simplified setup and easier to use in circuit designs.

Surface Mount: YES

Allows for easy and efficient PCB assembly and space-saving in compact designs.

Maximum VCEsat: 0.6 V

Low saturation voltage leads to minimal power loss and efficient operation.

Package Shape: RECTANGULAR

Space-efficient and easy to handle during assembly and mounting.

Terminal Form: GULL WING

Provides secure and reliable connections on the PCB.

No. of Terminals: 3

Simplified connections and reduced chance of error in circuit layouts.

Maximum Power Dissipation (Abs): 0.3 W

Can handle moderate power levels without overheating and damage.

Package Style (Meter): SMALL OUTLINE

Compact design suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 200

High gain value for efficient signal amplification in circuits.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 25 V

Allows for handling of higher voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 0.5 A

Can handle moderate to low currents in the circuit.

Terminal Position: DUAL

Correct placement of terminals for easy integration into the circuit layout.

Reference Standard: AEC-Q101

Complies with automotive-grade quality standards for reliable operation in automotive applications.

Nominal Transition Frequency (fT): 150 MHz

High-frequency response for efficient signal processing in high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) AS9013-H-HF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Comchip Technology

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.3 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

AS9013-H-HF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

Comchip Technology

Established in 2000, Comchip strives to become the leading global semiconductor solution provider, delivering solutions and support with cost and quality advantages. Based in Taiwan, Comchip is constantly expanding in key locations around the world to provide direct, superior customer service, with sales offices located in China, Silicon Valley and New York. With innovative research and patented manufacturing capabilities, Comchip offers products including bridge rectifiers, fast efficient rectifiers, switching diodes, Zener diodes, Schottky diodes, TVS and ESD surge protectors. Recent expansion of product offering also includes power semiconductor devices including transistor and MOSFET solutions. Comchip products cover a vast array of applications in the electronics industry including lighting, automotive, industrial computers, TFT-LCD panels, network/telecom, medical, and consumer electronics. To ensure superior quality and reliability, Comchip’s in-house labs and production facilities are aligned with current automotive industry requirements in accordance with industry standards including AEC-Q101, TS16949, ISO9001, and ISO14001.

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