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RN2303,LF

Toshiba

RN2303,LF by Toshiba

Toshiba's RN2303,LF is a PNP BJT transistor with VCEsat of 0.3V and hFE of 70. Ideal for switching applications, it has a max IC of 0.1A and fT of 200MHz. Its GULL WING terminals make it suitable for surface mount designs in compact electronic devices.

Median Price

$0.037

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Nova Conductors

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Bristol Electronics

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Dan-Mar Components

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Ampacity Inc.

Singapore . 185 parts In-Stock

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$0.128

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AZTECH Wire

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iodParts Technologies Inc.

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Overview

Discover the Toshiba RN2303,LF, a high-quality Small Signal Bipolar Junction Transistor designed for switching applications. Manufactured by Toshiba, known for their cutting-edge technology and reliable products, this PNP transistor offers customers a versatile solution with built-in resistors, making it ideal for various electronic projects. With a low VCEsat of 0.3V and a maximum collector-emitter voltage of 50V, this transistor provides efficient performance while maximizing power dissipation at 0.1W. Upgrade your electronics with the RN2303,LF and experience the value and benefits of Toshiba's superior craftsmanship.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various operating conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications and can complement existing NPN transistors in a circuit design.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by having a built-in resistor, reducing the number of external components required.

Transistor Application: SWITCHING

Optimized for efficient switching operations, making it ideal for applications that require fast on/off transitions.

Surface Mount: YES

Enables easy integration into surface mount technology PCB designs, saving space and simplifying assembly processes.

Maximum VCEsat: 0.3 V

Low VCEsat minimizes power dissipation and improves efficiency in switching applications.

Package Shape: RECTANGULAR

Compact rectangular shape allows for efficient use of board space and facilitates streamlined PCB layouts.

Terminal Form: GULL WING

Gull wing terminals provide secure attachment to the PCB, enhancing reliability and ease of soldering.

No. of Terminals: 3

Simplified 3-terminal configuration makes the transistor easy to handle and integrate into circuits.

Maximum Power Dissipation (Abs): 0.1 W

Low power dissipation ensures minimal heat generation and contributes to the overall efficiency of the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it suitable for compact electronic devices.

Maximum Power Dissipation Ambient: 0.1 W

Maintaining low power dissipation under ambient conditions ensures reliability and longevity of the transistor.

Minimum DC Current Gain (hFE): 70

A high minimum DC current gain ensures consistent and reliable amplification characteristics in various operating conditions.

Maximum Operating Temperature: 150 °C

Ability to operate at high temperatures makes this transistor suitable for demanding applications where temperature fluctuations may occur.

Maximum Collector-Base Capacitance: 6 pF

Low collector-base capacitance minimizes the risk of signal distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating provides the flexibility to handle higher voltage requirements in switching circuits.

Transistor Element Material: SILICON

Silicon material offers reliable performance and high conductivity, ensuring stable operation over a wide temperature range.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating allows for handling moderate current loads in switching applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit layout and connection options, enhancing ease of integration.

Nominal Transition Frequency (fT): 200 MHz

High nominal transition frequency enables fast switching speeds and enhances the overall performance of the transistor in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) RN2303,LF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

6 pF

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.1 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

RN2303,LF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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