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RN2301,LXHF

Toshiba

RN2301,LXHF by Toshiba

Toshiba's RN2301,LXHF is a PNP BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at up to 150°C with a max fT of 200MHz.

Median Price

$0.340

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,420 parts In-Stock

1+ parts

$0.340

100+ parts

$0.185

1k+ parts

$0.094

10k+ parts

$0.052

5,420

$0.340

$0.185

$0.094

$0.052

DigiKey

USA . 3,000 parts In-Stock

1+ parts

$0.340

100+ parts

-

1k+ parts

-

10k+ parts

$0.059

3,000

$0.340

-

-

$0.059

Overview

Unleash the power of innovation with the RN2301,LXHF by Toshiba. Crafted with precision and expertise, this PNP Small Signal Bipolar Junction Transistor is designed to excel in switching applications. With a maximum VCEsat of only 0.3V and a minimum DC Current Gain of 30, this transistor offers unparalleled performance and efficiency. The compact rectangular package body material ensures easy integration, while the built-in resistor simplifies circuit design. Whether you're a seasoned engineer or a DIY enthusiast, this transistor is guaranteed to elevate your projects to new heights. Choose Toshiba for reliability, quality, and cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits that require PNP transistors.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making it convenient for applications that require a single transistor with a resistor.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides efficient and reliable performance in switching circuits.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, making it suitable for compact electronic designs.

Maximum VCEsat: 0.3 V

The low maximum VCEsat of 0.3 V reduces power consumption and heat dissipation, contributing to overall energy efficiency of the circuit.

Package Shape: RECTANGULAR

The rectangular package shape is space-saving and allows for efficient placement on PCBs, making it ideal for compact designs.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections during soldering, ensuring stability in the circuit.

No. of Terminals: 3

With 3 terminals, this transistor is easy to integrate into circuits and offers flexibility in connection options.

Maximum Power Dissipation (Abs): 0.1 W

The low maximum power dissipation of 0.1 W ensures the transistor operates within safe temperature limits, enhancing its reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and is suitable for compact electronic devices.

Maximum Power Dissipation Ambient: 0.1 W

The low maximum power dissipation ambient rating of 0.1 W ensures the transistor can operate in various environmental conditions without overheating.

Minimum DC Current Gain (hFE): 30

Having a minimum DC current gain of 30 ensures consistent and reliable amplification in the circuit, improving performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments and remains stable during operation.

Maximum Collector-Base Capacitance: 6 pF

The low maximum collector-base capacitance of 6 pF minimizes signal distortion in high-frequency applications, enhancing signal integrity.

Maximum Collector-Emitter Voltage: 50 V

The 50 V maximum collector-emitter voltage rating provides a wide range of voltage tolerance, making it versatile for different voltage requirements.

Transistor Element Material: SILICON

Made of silicon, this transistor offers reliable performance, temperature stability, and low noise, making it suitable for a variety of applications.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1 A allows for handling moderate current loads while maintaining operational efficiency.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design and ensures easy integration into various electronic systems.

Reference Standard: AEC-Q101

Complies with the AEC-Q101 standard, ensuring high reliability and quality for automotive electronic applications.

Nominal Transition Frequency (fT): 200 MHz

With a nominal transition frequency of 200 MHz, this transistor offers high-frequency performance and is suitable for fast-switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) RN2301,LXHF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

6 pF

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.1 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

RN2301,LXHF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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