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PDTB143ET,215

NXP Semiconductors

PDTB143ET,215 by NXP Semiconductors

NXP Semiconductors' PDTB143ET,215 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 60, VCE of 50V, and fT of 140MHz. This small outline transistor has Gull Wing terminals in a rectangular package.

Median Price

$0.025

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 33,950 parts In-Stock

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$0.025

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$0.023

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$0.021

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33,950

$0.025

$0.023

$0.021

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Distributors (In-Stock)

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Digiode

USA . 93 parts In-Stock

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$0.024

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93

$0.024

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Vyrian

USA . 4,650 parts In-Stock

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4,650

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Anansix

USA . 1,793 parts In-Stock

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1,793

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Distributors (Availability)

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Corphita

USA . 163 parts In-Stock

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$0.022

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163

$0.022

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AZTECH Wire

Italy . 311 parts In-Stock

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$12.960

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311

$12.960

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Continental Prestige Electronics

USA . 33,950 parts In-Stock

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$0.033

33,950

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$0.033

QUARKTWIN TECHNOLOGY LTD

USA . 19,236 parts In-Stock

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UNI Independent Distributors

Spain . 6,185 parts In-Stock

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Overview

Discover the cutting-edge technology behind the PDTB143ET,215 by NXP Semiconductors. This Small Signal Bipolar Junction Transistor (BJT) offers unparalleled quality and reliability, making it the perfect choice for switching applications. With a PNP polarity and built-in resistor configuration, this transistor provides seamless performance in a compact package. Whether you're a hobbyist or a professional, this product's 60 minimum DC current gain and 50V maximum collector-emitter voltage ensure optimal functionality. Trust NXP Semiconductors to deliver superior products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for use in applications requiring PNP transistors, expanding compatibility options.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by eliminating the need for an external resistor, saving space and reducing overall costs.

Transistor Application: SWITCHING

Designed for efficient switching operations, making it ideal for use in various electronic devices.

Surface Mount: YES

Facilitates easy and convenient mounting on circuit boards, enhancing the efficiency of assembly processes.

Package Shape: RECTANGULAR

Optimal shape for space-efficient placement on circuit boards, enabling compact designs.

Terminal Form: GULL WING

Provides secure soldering connection for reliable performance in different operating conditions.

No. of Terminals: 3

Simple and clear terminal layout for easy integration into circuit designs.

Package Style (Meter): SMALL OUTLINE

Compact package size for efficient use of board space in small electronic devices.

Minimum DC Current Gain (hFE): 60

Consistent and reliable amplification of electrical signals for consistent performance.

Maximum Collector-Emitter Voltage: 50 V

Adequate voltage rating for handling various voltage levels in electronic circuits.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in different operating conditions.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels for efficient circuit operation.

Terminal Position: DUAL

Easily identifiable terminal positions for proper connection in circuit layouts.

Reference Standard: AEC-Q101; IEC-60134

Adherence to industry standards ensures quality and reliability in performance.

Nominal Transition Frequency (fT): 140 MHz

High transition frequency for fast signal processing and switching speed.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTB143ET,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PDTB143ET,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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