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PDTB123TT

Philips Semiconductors

PDTB123TT by Philips Semiconductors

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 100; Transistor Element Material: SILICON;

Median Price

$0.035

Lifecycle Status

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8

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Nova Conductors

Japan . 1,000 parts In-Stock

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Vyrian

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Zilex Electronics Inc.

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ComSIT Distribution GmbH

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Digiode

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Anansix

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Continental Prestige Electronics

USA . 5,943 parts In-Stock

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Argo Parts USA

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Ampacity Inc.

Singapore . 771 parts In-Stock

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AZTECH Wire

Italy . 11,756 parts In-Stock

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One Stop Electronics

USA . 279 parts In-Stock

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Lixinc

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Corphita

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Authorized Procurement Solutions

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Supply Digital

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Perfect Parts

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTB123TT attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Philips Semiconductors

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

PDTB123TT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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