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PDTB113EU,135

NXP Semiconductors

PDTB113EU,135 by NXP Semiconductors

NXP Semiconductors' PDTB113EU,135 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 33, VCE of 50V, and fT of 140MHz. This small outline transistor has Gull Wing terminals and meets AEC-Q101 and IEC-60134 standards.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 59,083 parts In-Stock

1+ parts

$0.038

100+ parts

$0.035

1k+ parts

$0.032

10k+ parts

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59,083

$0.038

$0.035

$0.032

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,868 parts In-Stock

1+ parts

$0.036

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2,868

$0.036

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Vyrian

USA . 6,444 parts In-Stock

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6,444

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Anansix

USA . 1,987 parts In-Stock

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1,987

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Distributors (Availability)

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Corphita

USA . 2,570 parts In-Stock

1+ parts

$0.034

100+ parts

-

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2,570

$0.034

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AZTECH Wire

Italy . 177 parts In-Stock

1+ parts

$21.990

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177

$21.990

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Continental Prestige Electronics

USA . 59,083 parts In-Stock

1+ parts

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$0.041

59,083

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$0.041

UNI Independent Distributors

Spain . 108 parts In-Stock

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Overview

Upgrade your electronic projects with the PDTB113EU,135 by NXP Semiconductors. This high-quality Small Signal Bipolar Junction Transistor (BJT) boasts a PNP polarity, making it perfect for switching applications. With a built-in resistor and Gull Wing terminals, this transistor offers ease of use and reliability. Whether you're a DIY enthusiast or a professional engineer, this product provides exceptional value and performance. Trust NXP Semiconductors to deliver top-notch components for all your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and good electrical insulation, making the product suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching circuits, making this product versatile for different design requirements.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves board space, making the product convenient to use.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and high efficiency.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, reducing assembly time and costs.

Package Shape: RECTANGULAR

Rectangular package shape is standard and easy to handle during assembly, ensuring compatibility with various PCB layouts.

Terminal Form: GULL WING

Gull wing terminals provide secure solder connections and mechanical stability, enhancing the reliability of the product.

No. of Terminals: 3

Three terminals provide simple connectivity and compatibility with standard circuit designs.

Minimum DC Current Gain (hFE): 33

Minimum DC current gain of 33 ensures consistent and stable amplification in various operating conditions.

Maximum Collector-Emitter Voltage: 50 V

With a high collector-emitter voltage rating of 50V, the transistor can handle higher voltage levels, increasing design flexibility.

Transistor Element Material: SILICON

Silicon material offers high thermal conductivity and reliability, ensuring long-term performance of the transistor.

Maximum Collector Current (IC): 0.5 A

Maximum collector current of 0.5A allows the transistor to handle moderate current loads, suitable for various applications.

Terminal Position: DUAL

Dual terminal position simplifies PCB layout and enables easy connection to external components.

Reference Standard: AEC-Q101; IEC-60134

Meets industry standards for quality and performance, making the product reliable for demanding applications.

Nominal Transition Frequency (fT): 140 MHz

High nominal transition frequency of 140MHz enables fast switching speeds and high-frequency operation, ideal for high-performance applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTB113EU,135 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

33

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PDTB113EU,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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