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PDTB113ZU,135

NXP Semiconductors

PDTB113ZU,135 by NXP Semiconductors

NXP Semiconductors' PDTB113ZU,135 is a PNP BJT with built-in resistor for switching applications. Features include 50V VCE, 0.5A IC, and 140MHz fT. This small outline transistor has Gull Wing terminals and meets AEC-Q101 and IEC-60134 standards.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 20,000 parts In-Stock

1+ parts

$0.038

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$0.035

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$0.032

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-

20,000

$0.038

$0.035

$0.032

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Distributors (In-Stock)

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Digiode

USA . 1,198 parts In-Stock

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$0.036

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1,198

$0.036

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Vyrian

USA . 6,667 parts In-Stock

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6,667

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Anansix

USA . 987 parts In-Stock

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987

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Distributors (Availability)

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Corphita

USA . 3,299 parts In-Stock

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$0.034

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3,299

$0.034

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AZTECH Wire

Italy . 1,091 parts In-Stock

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$19.840

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1,091

$19.840

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Continental Prestige Electronics

USA . 20,000 parts In-Stock

1+ parts

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$0.041

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$0.041

UNI Independent Distributors

Spain . 45 parts In-Stock

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Overview

Experience the superior quality and reliability of NXP Semiconductors with the PDTB113ZU,135 Small Signal Bipolar Junction Transistor. Designed for switching applications, this PNP transistor offers a seamless performance with a maximum collector-emitter voltage of 50V and a minimum DC current gain of 70. With a surface-mount option and built-in resistor, this transistor provides convenience and efficiency for your electronic projects. Trust in NXP Semiconductors to deliver top-notch components that enhance the functionality of your devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the transistor lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: PNP

The PNP polarity or channel type allows for easy integration into PNP transistor circuits, enhancing compatibility and ease of use.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor in the single configuration simplifies circuit design and reduces the need for additional components, making it cost-effective.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and efficient performance in electronic switching circuits.

Surface Mount: YES

With surface mount capability, this transistor can be easily mounted on PCBs, saving space and allowing for automated assembly processes.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact form factor, making it suitable for space-constrained applications.

No. of Terminals: 3

The 3-terminal design simplifies connectivity and makes it easy to integrate into electronic circuits with minimal wiring.

Minimum DC Current Gain (hFE): 70

With a minimum DC current gain of 70, this transistor offers consistent and reliable amplification of signals in various applications.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage of 50V makes this transistor suitable for use in circuits with higher voltage requirements.

Transistor Element Material: SILICON

The silicon material used in the transistor element ensures high performance, reliability, and temperature resistance for long-term use.

Maximum Collector Current (IC): 0.5 A

Capable of handling a maximum collector current of 0.5A, this transistor is suitable for low to medium power applications.

Terminal Position: DUAL

The dual terminal position allows for flexible PCB layout options and easy connection to external components in a circuit.

Reference Standard: AEC-Q101; IEC-60134

Compliance with AEC-Q101 and IEC-60134 standards ensures high quality and reliability, making it suitable for automotive and industrial applications.

Nominal Transition Frequency (fT): 140 MHz

With a high nominal transition frequency of 140MHz, this transistor can operate at high frequencies, making it suitable for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTB113ZU,135 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PDTB113ZU,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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