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PDTB123TT

NXP Semiconductors

PDTB123TT by NXP Semiconductors

The NXP Semiconductors PDTB123TT is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.5A, and power dissipation of 0.25W. This small outline transistor operates up to 150°C and is surface mountable with Gull Wing terminals.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 1,000 parts In-Stock

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Vyrian

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Zilex Electronics Inc.

Canada . 3,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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ComSIT USA

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Digiode

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Anansix

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Continental Prestige Electronics

USA . 5,943 parts In-Stock

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Argo Parts USA

USA . 1,741 parts In-Stock

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Ampacity Inc.

Singapore . 771 parts In-Stock

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$8.050

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AZTECH Wire

Italy . 11,756 parts In-Stock

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One Stop Electronics

USA . 279 parts In-Stock

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$59.050

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Lixinc

USA . 13,168 parts In-Stock

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Corphita

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Authorized Procurement Solutions

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Supply Digital

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Perfect Parts

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Overview

Enhance your electronics projects with the high-quality PDTB123TT by NXP Semiconductors. As a leading manufacturer in the industry, NXP delivers reliable and innovative solutions. This small signal bipolar junction transistor is perfect for switching applications, offering a single configuration with a built-in resistor for added convenience. With its compact size and excellent performance, the PDTB123TT is a valuable asset for any project, providing customers with efficiency and reliability. Upgrade your design with this top-notch transistor today and experience the difference in quality and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and resistant to damage during transportation and assembly.

Polarity or Channel Type: PNP

This particular type is suitable for switching applications and allows for efficient operation in such scenarios.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making it convenient for compact electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance and reliability in such operations.

Surface Mount: YES

Surface-mount technology provides easier and more efficient assembly processes, making this transistor suitable for modern production methods.

Terminal Form: GULL WING

The gull wing terminal form facilitates automated assembly processes, improving efficiency and accuracy during manufacturing.

Maximum Power Dissipation (Abs): 0.25 W

With a relatively high power dissipation rating, this transistor can handle moderate loads and is suitable for a variety of applications.

Minimum DC Current Gain (hFE): 100

A high DC current gain ensures stable and predictable performance in amplification and switching circuits, making this transistor a reliable choice.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand demanding environments and extended use without performance degradation.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating provides a margin of safety and reliability in high-voltage applications.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate collector currents, this transistor is suitable for a wide range of applications without risk of overheating or failure.

Terminal Finish: Tin (Sn)

The tin terminal finish ensures good solderability and reliable electrical connections during assembly, contributing to the overall quality of the product.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand the thermal stress of the soldering process, ensuring reliable and durable connections.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTB123TT attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PDTB123TT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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