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ADTA124ECAQ-7

Diodes Incorporated

ADTA124ECAQ-7 by Diodes Incorporated

The Diodes Inc. ADTA124ECAQ-7 is a PNP BJT with 3 terminals, hFE of 56, and IC of 0.1A. It has a max power dissipation of 0.31W and operates b/w -55 to 150°C. Ideal for small outline applications requiring a transistor with built-in resistor in automotive environments compliant with AEC-Q101 standards.

Median Price

$0.041

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 219,000 parts In-Stock

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$0.041

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Vyrian

USA . 15,821 parts In-Stock

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VNN

France . 4,698 parts In-Stock

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Nova Conductors

Japan . 67 parts In-Stock

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Ampacity Inc.

Singapore . 218,576 parts In-Stock

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$0.035

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Corohmni

South Africa . 731 parts In-Stock

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$1.811

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731

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AZTECH Wire

Italy . 769 parts In-Stock

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$9.610

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769

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Continental Prestige Electronics

USA . 3,922 parts In-Stock

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Argo Parts USA

USA . 2,219 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Overview

Enhance your electronic designs with the premium quality and reliability of the ADTA124ECAQ-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-notch small signal bipolar junction transistors that excel in various applications. With a single configuration and built-in resistor, this PNP transistor offers exceptional value and benefits to customers seeking high-performance solutions. Experience the advantages of superior quality and efficiency with the ADTA124ECAQ-7 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components, ensuring long-term reliability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are preferred for efficient circuit design.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by already including a resistor, reducing the need for additional components.

Surface Mount: YES

Allows for easy and efficient installation on a circuit board, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Fits well in compact spaces and allows for efficient packing on the PCB.

Maximum Power Dissipation (Abs): 0.31 W

Can handle relatively high power dissipation without overheating, ensuring stable operation.

Minimum DC Current Gain (hFE): 56

Provides sufficient amplification for signal processing in various electronic devices.

Maximum Operating Temperature: 150 °C

Suitable for use in environments with elevated temperatures, ensuring reliable performance.

Transistor Element Material: SILICON

Offers high efficiency and reliability compared to other materials, making it a popular choice.

Minimum Operating Temperature: -55 °C

Capable of functioning in low-temperature environments, providing versatility in usage.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels, suitable for a wide range of applications.

Terminal Finish: MATTE TIN

Provides good electrical conductivity and resistance to corrosion, ensuring stable connections.

Nominal Transition Frequency (fT): 250 MHz

Offers high-frequency performance, making it suitable for applications requiring fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ADTA124ECAQ-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

56

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ADTA124ECAQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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