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ADTA143XUAQ-7

Diodes Incorporated

ADTA143XUAQ-7 by Diodes Incorporated

ADTA143XUAQ-7 by Diodes Inc. is a PNP BJT with hFE of 30, VCEO of 50V, and fT of 250MHz. It comes in a small outline package with built-in resistor, suitable for automotive applications meeting AEC-Q101 standard.

Median Price

$0.220

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 5,902 parts In-Stock

1+ parts

$0.220

100+ parts

$0.082

1k+ parts

$0.053

10k+ parts

$0.037

5,902

$0.220

$0.082

$0.053

$0.037

Mouser Electronics

USA . 1,497 parts In-Stock

1+ parts

$0.220

100+ parts

$0.051

1k+ parts

$0.046

10k+ parts

$0.029

1,497

$0.220

$0.051

$0.046

$0.029

Verical

USA . 51,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.024

51,000

-

-

-

$0.024

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 505 parts In-Stock

1+ parts

$6.530

100+ parts

-

1k+ parts

-

10k+ parts

-

505

$6.530

-

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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10,000

-

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 3,886 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,886

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Perfect Parts

USA . 3,360 parts In-Stock

1+ parts

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3,360

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Northwest PG Solutions

USA . 548 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$6.399

10k+ parts

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548

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$6.399

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Overview

Enhance your electronic designs with the ADTA143XUAQ-7 by Diodes Incorporated, a top-tier manufacturer known for its superior quality and reliability. As part of the Small Signal Bipolar Junction Transistors (BJT) category, this PNP transistor offers single configuration with built-in resistor, making it ideal for a wide range of applications. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 30, this transistor delivers exceptional performance and efficiency. Trust in Diodes Incorporated to provide cutting-edge solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor versatile.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Surface Mount: YES

Easy to mount on the surface of a PCB, saving assembly time and enabling automated manufacturing processes.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on the PCB.

Terminal Form: GULL WING

Gull wing terminals provide mechanical strength and secure solder connections during assembly.

No. of Terminals: 3

Simple and straightforward pin configuration for ease of connection in circuits.

Package Style (Meter): SMALL OUTLINE

Compact size makes it suitable for applications where space is limited.

Minimum DC Current Gain (hFE): 30

Relatively high minimum current gain ensures consistent transistor performance in various operating conditions.

Maximum Collector-Emitter Voltage: 50 V

Can handle relatively high voltages, increasing the range of applications it can be used for.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability compared to other materials.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating for low power applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance.

Terminal Position: DUAL

Dual terminal position allows for flexibility in PCB layout and connection options.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 ensures high reliability and quality for automotive applications.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for fast switching speeds in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ADTA143XUAQ-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 2.13

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ADTA143XUAQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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