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SMMJT350T3G

Onsemi

SMMJT350T3G by Onsemi

SMMJT350T3G by Onsemi is a PNP BJT transistor with 300V VCEO, 0.5A IC, and 2.75W power dissipation suitable for switching applications. It comes in a small outline package with Gull Wing terminals, operating b/w -55 °C to 150°C. Ideal for automotive electronics due to AEC-Q101 compliance.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 30,000 parts In-Stock

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Vyrian

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Flip Electronics

USA . 4,000 parts In-Stock

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Digiode

USA . 1,174 parts In-Stock

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Component Stockers USA

USA . 27,073 parts In-Stock

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$3.060

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AZTECH Wire

Italy . 80 parts In-Stock

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$17.170

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QUARKTWIN TECHNOLOGY LTD

USA . 14,178 parts In-Stock

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Problanco Electronics

Mexico . 5,810 parts In-Stock

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TANS Electronics

Latvia . 4,359 parts In-Stock

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Kulean Microsystems

USA . 3,931 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 2,650 parts In-Stock

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UHIMA Technologies

Türkiye . 495 parts In-Stock

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Corphita

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Overview

Experience top-notch quality and performance with the SMMJT350T3G by Onsemi, a leading manufacturer in the industry. This PNP Small Signal Bipolar Junction Transistor is perfect for switching applications, offering unmatched reliability and efficiency. With its surface mount capability and high operating temperature range, this transistor is versatile and suitable for a wide range of electronic projects. Trust Onsemi to deliver cutting-edge technology and innovation that exceeds expectations. Elevate your designs with the SMMJT350T3G and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this product suitable for such purposes.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easier to work with.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for efficient operation in such circuits.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and providing a more compact overall design.

Maximum Power Dissipation (Abs): 2.75 W

With a high maximum power dissipation, this transistor can handle relatively high power levels without risking damage.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures reliable performance even in high-temperature environments.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage rating allows the transistor to be used in a wide range of applications.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this transistor can operate reliably even in extremely cold conditions.

Maximum Collector Current (IC): 0.5 A

The maximum collector current rating of 0.5 A allows for use in low to medium current circuits.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 ensures that this transistor meets the automotive industry's stringent quality and reliability standards.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMJT350T3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMMJT350T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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